Tunnel junctions on as-grown superconducting MgB2 thin films

K. Ueda; M. Naito

doi:10.1109/TASC.2003.812213

Tunnel junctions on as-grown superconducting MgB₂ thin films

K. Ueda^*, M. Naito

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

We demonstrate that good superconductor/insulator/ normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB₂ thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280° C. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgO_x,/MgB₂ junctions showed a reproducible and well-defined superconducting gap (Δ =∼ 2.5 meV). The resultant 2Δ/k_BT_c was significantly smaller than the predicted BCS value of 3.52.

Original language	English
Pages (from-to)	3249-3252
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2 III
DOIs	https://doi.org/10.1109/TASC.2003.812213
Publication status	Published - 2003 Jun
Externally published	Yes
Event	2002 Applied Superconductivity Conference - Houston, TX, United States Duration: 2002 Aug 4 → 2002 Aug 9

Keywords

As-grown
In-situ annealing
MgB
Superconducting gap
Thin films
Tunnel junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/TASC.2003.812213

Cite this

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title = "Tunnel junctions on as-grown superconducting MgB2 thin films",

abstract = "We demonstrate that good superconductor/insulator/ normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280° C. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx,/MgB2 junctions showed a reproducible and well-defined superconducting gap (Δ =∼ 2.5 meV). The resultant 2Δ/kBTc was significantly smaller than the predicted BCS value of 3.52.",

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AU - Ueda, K.

AU - Naito, M.

PY - 2003/6

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N2 - We demonstrate that good superconductor/insulator/ normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280° C. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx,/MgB2 junctions showed a reproducible and well-defined superconducting gap (Δ =∼ 2.5 meV). The resultant 2Δ/kBTc was significantly smaller than the predicted BCS value of 3.52.

AB - We demonstrate that good superconductor/insulator/ normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280° C. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx,/MgB2 junctions showed a reproducible and well-defined superconducting gap (Δ =∼ 2.5 meV). The resultant 2Δ/kBTc was significantly smaller than the predicted BCS value of 3.52.

KW - As-grown

KW - In-situ annealing

KW - MgB

KW - Superconducting gap

KW - Thin films

KW - Tunnel junctions

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