Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA 1/2 , which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

Original languageEnglish
Pages (from-to)1268-1277
Number of pages10
JournalOptics Express
Volume26
Issue number2
DOIs
Publication statusPublished - 2018 Jan 22
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kanno, E., Takeda, K., Fujii, T., Hasebe, K., Nishi, H., Yamamoto, T., Kakitsuka, T., & Matsuo, S. (2018). Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates. Optics Express, 26(2), 1268-1277. https://doi.org/10.1364/OE.26.001268