Two types of on-state observed in the operation of a redox-based three-terminal device

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Tsuyoshi Hasegawa, Satoshi Watanabe, Shu Yamaguchi, Toshiro Hiramoto, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A redox-based three-terminal device was fabricated using Ta 2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states.

Original languageEnglish
Title of host publicationAdvanced Micro-Device Engineering IV
PublisherTrans Tech Publications Ltd
Pages111-115
Number of pages5
ISBN (Print)9783037859629
DOIs
Publication statusPublished - 2014
Event4th International Conference on Advanced Micro-Device Engineering, AMDE 2012 - Kiryu, Japan
Duration: 2012 Dec 72012 Dec 7

Publication series

NameKey Engineering Materials
Volume596
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

Other4th International Conference on Advanced Micro-Device Engineering, AMDE 2012
CountryJapan
CityKiryu
Period12/12/712/12/7

Keywords

  • Atom transistor
  • Redox-based device
  • Three-terminal device

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Wang, Q., Itoh, Y., Tsuruoka, T., Hasegawa, T., Watanabe, S., Yamaguchi, S., Hiramoto, T., & Aono, M. (2014). Two types of on-state observed in the operation of a redox-based three-terminal device. In Advanced Micro-Device Engineering IV (pp. 111-115). (Key Engineering Materials; Vol. 596). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.596.111