Two types of on-state observed in the operation of a redox-based three-terminal device

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Tsuyoshi Hasegawa, Satoshi Watanabe, Shu Yamaguchi, Toshiro Hiramoto, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A redox-based three-terminal device was fabricated using Ta 2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states.

Original languageEnglish
Title of host publicationKey Engineering Materials
Pages111-115
Number of pages5
Volume596
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event4th International Conference on Advanced Micro-Device Engineering, AMDE 2012 - Kiryu, Japan
Duration: 2012 Dec 72012 Dec 7

Publication series

NameKey Engineering Materials
Volume596
ISSN (Print)10139826

Other

Other4th International Conference on Advanced Micro-Device Engineering, AMDE 2012
CountryJapan
CityKiryu
Period12/12/712/12/7

Fingerprint

Semiconductor materials
Metals
Electrodes
Oxygen vacancies
Anions
Negative ions
Switches
Oxygen
Data storage equipment
Oxidation-Reduction

Keywords

  • Atom transistor
  • Redox-based device
  • Ta O
  • Three-terminal device

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Wang, Q., Itoh, Y., Tsuruoka, T., Hasegawa, T., Watanabe, S., Yamaguchi, S., ... Aono, M. (2014). Two types of on-state observed in the operation of a redox-based three-terminal device. In Key Engineering Materials (Vol. 596, pp. 111-115). (Key Engineering Materials; Vol. 596). https://doi.org/10.4028/www.scientific.net/KEM.596.111

Two types of on-state observed in the operation of a redox-based three-terminal device. / Wang, Qi; Itoh, Yaomi; Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Watanabe, Satoshi; Yamaguchi, Shu; Hiramoto, Toshiro; Aono, Masakazu.

Key Engineering Materials. Vol. 596 2014. p. 111-115 (Key Engineering Materials; Vol. 596).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, Q, Itoh, Y, Tsuruoka, T, Hasegawa, T, Watanabe, S, Yamaguchi, S, Hiramoto, T & Aono, M 2014, Two types of on-state observed in the operation of a redox-based three-terminal device. in Key Engineering Materials. vol. 596, Key Engineering Materials, vol. 596, pp. 111-115, 4th International Conference on Advanced Micro-Device Engineering, AMDE 2012, Kiryu, Japan, 12/12/7. https://doi.org/10.4028/www.scientific.net/KEM.596.111
Wang Q, Itoh Y, Tsuruoka T, Hasegawa T, Watanabe S, Yamaguchi S et al. Two types of on-state observed in the operation of a redox-based three-terminal device. In Key Engineering Materials. Vol. 596. 2014. p. 111-115. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.596.111
Wang, Qi ; Itoh, Yaomi ; Tsuruoka, Tohru ; Hasegawa, Tsuyoshi ; Watanabe, Satoshi ; Yamaguchi, Shu ; Hiramoto, Toshiro ; Aono, Masakazu. / Two types of on-state observed in the operation of a redox-based three-terminal device. Key Engineering Materials. Vol. 596 2014. pp. 111-115 (Key Engineering Materials).
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