TY - GEN
T1 - Two types of on-state observed in the operation of a redox-based three-terminal device
AU - Wang, Qi
AU - Itoh, Yaomi
AU - Tsuruoka, Tohru
AU - Hasegawa, Tsuyoshi
AU - Watanabe, Satoshi
AU - Yamaguchi, Shu
AU - Hiramoto, Toshiro
AU - Aono, Masakazu
PY - 2014
Y1 - 2014
N2 - A redox-based three-terminal device was fabricated using Ta 2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states.
AB - A redox-based three-terminal device was fabricated using Ta 2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states.
KW - Atom transistor
KW - Redox-based device
KW - Three-terminal device
UR - http://www.scopus.com/inward/record.url?scp=84891868791&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891868791&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.596.111
DO - 10.4028/www.scientific.net/KEM.596.111
M3 - Conference contribution
AN - SCOPUS:84891868791
SN - 9783037859629
T3 - Key Engineering Materials
SP - 111
EP - 115
BT - Advanced Micro-Device Engineering IV
PB - Trans Tech Publications Ltd
T2 - 4th International Conference on Advanced Micro-Device Engineering, AMDE 2012
Y2 - 7 December 2012 through 7 December 2012
ER -