Abstract
A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.
| Original language | English |
|---|---|
| Article number | 251101 |
| Journal | Applied Physics Letters |
| Volume | 109 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2016 Dec 19 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Ultra-fine metal gate operated graphene optical intensity modulator. / Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji.
In: Applied Physics Letters, Vol. 109, No. 25, 251101, 19.12.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-fine metal gate operated graphene optical intensity modulator
AU - Kou, Rai
AU - Hori, Yosuke
AU - Tsuchizawa, Tai
AU - Warabi, Kaori
AU - Kobayashi, Yuzuki
AU - Harada, Yuichi
AU - Hibino, Hiroki
AU - Yamamoto, Tsuyoshi
AU - Nakajima, Hirochika
AU - Yamada, Koji
PY - 2016/12/19
Y1 - 2016/12/19
N2 - A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.
AB - A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.
UR - http://www.scopus.com/inward/record.url?scp=85006868957&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006868957&partnerID=8YFLogxK
U2 - 10.1063/1.4972306
DO - 10.1063/1.4972306
M3 - Article
AN - SCOPUS:85006868957
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 251101
ER -