Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator

T. Aihara*, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, Takaaki Kakitsuka, H. Fukuda, S. Matsuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ∼2 dB. 32-Gbps modulation of the MZM was also demonstrated.

Original languageEnglish
Title of host publicationNanophotonics and Micro/Nano Optics IV
EditorsZhiping Zhou, Kazumi Wada
ISBN (Electronic)9781510622449
Publication statusPublished - 2018 Jan 1
Externally publishedYes
EventNanophotonics and Micro/Nano Optics IV 2018 - Beijing, China
Duration: 2018 Oct 122018 Oct 13

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceNanophotonics and Micro/Nano Optics IV 2018


  • Mach-Zehnder modulator
  • Si photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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