Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator

T. Aihara; T. Hiraki; K. Hasebe; T. Fujii; K. Takeda; T. Tsuchizawa; Takaaki Kakitsuka; H. Fukuda; S. Matsuo

doi:10.1117/12.2503433

Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator

T. Aihara^*, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, Takaaki Kakitsuka, H. Fukuda, S. Matsuo

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO₂ film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a V_πL of 0.09 Vcm and insertion loss of ∼2 dB. 32-Gbps modulation of the MZM was also demonstrated.

Original language	English
Title of host publication	Nanophotonics and Micro/Nano Optics IV
Editors	Zhiping Zhou, Kazumi Wada
Publisher	SPIE
ISBN (Electronic)	9781510622449
DOIs	https://doi.org/10.1117/12.2503433
Publication status	Published - 2018 Jan 1
Externally published	Yes
Event	Nanophotonics and Micro/Nano Optics IV 2018 - Beijing, China Duration: 2018 Oct 12 → 2018 Oct 13

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10823
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Nanophotonics and Micro/Nano Optics IV 2018
Country/Territory	China
City	Beijing
Period	18/10/12 → 18/10/13

Keywords

Mach-Zehnder modulator
Si photonics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2503433

Cite this

Aihara, T., Hiraki, T., Hasebe, K., Fujii, T., Takeda, K., Tsuchizawa, T., Kakitsuka, T., Fukuda, H., & Matsuo, S. (2018). Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator. In Z. Zhou, & K. Wada (Eds.), Nanophotonics and Micro/Nano Optics IV [1082309] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10823). SPIE. https://doi.org/10.1117/12.2503433

Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator. / Aihara, T.; Hiraki, T.; Hasebe, K. et al.

Nanophotonics and Micro/Nano Optics IV. ed. / Zhiping Zhou; Kazumi Wada. SPIE, 2018. 1082309 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10823).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aihara, T, Hiraki, T, Hasebe, K, Fujii, T, Takeda, K, Tsuchizawa, T, Kakitsuka, T, Fukuda, H & Matsuo, S 2018, Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator. in Z Zhou & K Wada (eds), Nanophotonics and Micro/Nano Optics IV., 1082309, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10823, SPIE, Nanophotonics and Micro/Nano Optics IV 2018, Beijing, China, 18/10/12. https://doi.org/10.1117/12.2503433

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title = "Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator",

abstract = "High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ∼2 dB. 32-Gbps modulation of the MZM was also demonstrated.",

keywords = "Mach-Zehnder modulator, Si photonics",

author = "T. Aihara and T. Hiraki and K. Hasebe and T. Fujii and K. Takeda and T. Tsuchizawa and Takaaki Kakitsuka and H. Fukuda and S. Matsuo",

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doi = "10.1117/12.2503433",

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AU - Aihara, T.

AU - Hiraki, T.

AU - Hasebe, K.

AU - Fujii, T.

AU - Takeda, K.

AU - Tsuchizawa, T.

AU - Kakitsuka, Takaaki

AU - Fukuda, H.

AU - Matsuo, S.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ∼2 dB. 32-Gbps modulation of the MZM was also demonstrated.

AB - High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ∼2 dB. 32-Gbps modulation of the MZM was also demonstrated.

KW - Mach-Zehnder modulator

KW - Si photonics

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BT - Nanophotonics and Micro/Nano Optics IV

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ER -

Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator

Abstract

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Keywords

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