Ultra-high-speed and low-power SOI CMOS technology with body-tied hybrid trench isolation structure

Yuuichi Hirano, Takashi Ipposhi, Dang Hai Thai, Toshiaki Iwamatsu, Tatsuhiko Ikeda, Mikio Tsujiuchi, Shigeto Maegawa, Masahide Inuishi, Yuzuru Ohji

Research output: Contribution to conferencePaper

Abstract

The hybrid-trench-isolation (HTI) SOI technology overcomes the scaling limitations caused by the difficulty of the gate thinning. A high-speed and low-power microcontroller including logic, memory, analog, and PLL circuits has been demonstrated by using the HTI SOI technology with bulk-layout compatibility. Over 10Gbps and low-noise operation with excellent eye patterns of output buffer circuits were also obtained for ultra-high-speed network LSIs. It is also verified that low-voltage and high-speed operation is achieved for an Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure connecting the bodies of the access and the driver transistors with the word line. It is concluded that the SOI technology with the HTI structure is one of the solutions against the scaling limitations.

Original languageEnglish
Pages60-64
Number of pages5
Publication statusPublished - 2004 Dec 1
EventDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hirano, Y., Ipposhi, T., Thai, D. H., Iwamatsu, T., Ikeda, T., Tsujiuchi, M., Maegawa, S., Inuishi, M., & Ohji, Y. (2004). Ultra-high-speed and low-power SOI CMOS technology with body-tied hybrid trench isolation structure. 60-64. Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.