Abstract
UV light-exited ozone has been applied for rapid low-temperature oxidation of silicon in a wafer-transfer type chamber. Oxidation was made in almost 100% ozone atmosphere with KrF excimer laser (248 nm) which enables the effective supply of O (1D) atoms to the processed surface. In this system, SiO2 film with a thickness of more than 3.5 nm is achieved even as low as 200°C. Uniform 2.9 nm film formation over 5-inch wafer with a thickness fluctuation of 0.1 nm was also obtained when KrF laser irradiation area was enlarged by a cylindrical concave lens. Current-voltage measurement has been employed to characterize SiO2 films and it is confirmed that the catastrophic breakdown field strength was 13 MV/cm. Processing pressure dependence of density of O(1D) atoms which contributing to the oxidation was estimated. Experimental result that the thickness of SiO 2 film increases by decreasing the processing pressure agrees with our estimated result at the pressure range between 340 Pa and 820 Pa.
| Original language | English |
|---|---|
| Pages (from-to) | 309-312 |
| Number of pages | 4 |
| Journal | Shinku/Journal of the Vacuum Society of Japan |
| Volume | 48 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2005 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
Ultra-low temperature oxidation of silicon using UV light-exited ozone in wafer-transfer type chamber. / Tosaka, Aki; Nishiguchi, Tetsuya; Nonaka, Hidehiko; Ichimura, Shingo.
In: Shinku/Journal of the Vacuum Society of Japan, Vol. 48, No. 5, 01.01.2005, p. 309-312.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-low temperature oxidation of silicon using UV light-exited ozone in wafer-transfer type chamber
AU - Tosaka, Aki
AU - Nishiguchi, Tetsuya
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
PY - 2005/1/1
Y1 - 2005/1/1
N2 - UV light-exited ozone has been applied for rapid low-temperature oxidation of silicon in a wafer-transfer type chamber. Oxidation was made in almost 100% ozone atmosphere with KrF excimer laser (248 nm) which enables the effective supply of O (1D) atoms to the processed surface. In this system, SiO2 film with a thickness of more than 3.5 nm is achieved even as low as 200°C. Uniform 2.9 nm film formation over 5-inch wafer with a thickness fluctuation of 0.1 nm was also obtained when KrF laser irradiation area was enlarged by a cylindrical concave lens. Current-voltage measurement has been employed to characterize SiO2 films and it is confirmed that the catastrophic breakdown field strength was 13 MV/cm. Processing pressure dependence of density of O(1D) atoms which contributing to the oxidation was estimated. Experimental result that the thickness of SiO 2 film increases by decreasing the processing pressure agrees with our estimated result at the pressure range between 340 Pa and 820 Pa.
AB - UV light-exited ozone has been applied for rapid low-temperature oxidation of silicon in a wafer-transfer type chamber. Oxidation was made in almost 100% ozone atmosphere with KrF excimer laser (248 nm) which enables the effective supply of O (1D) atoms to the processed surface. In this system, SiO2 film with a thickness of more than 3.5 nm is achieved even as low as 200°C. Uniform 2.9 nm film formation over 5-inch wafer with a thickness fluctuation of 0.1 nm was also obtained when KrF laser irradiation area was enlarged by a cylindrical concave lens. Current-voltage measurement has been employed to characterize SiO2 films and it is confirmed that the catastrophic breakdown field strength was 13 MV/cm. Processing pressure dependence of density of O(1D) atoms which contributing to the oxidation was estimated. Experimental result that the thickness of SiO 2 film increases by decreasing the processing pressure agrees with our estimated result at the pressure range between 340 Pa and 820 Pa.
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U2 - 10.3131/jvsj.48.309
DO - 10.3131/jvsj.48.309
M3 - Article
AN - SCOPUS:23344450308
VL - 48
SP - 309
EP - 312
JO - Journal of the Vacuum Society of Japan
JF - Journal of the Vacuum Society of Japan
SN - 1882-2398
IS - 5
ER -