Ultra-low temperature oxidation of silicon using UV light-exited ozone in wafer-transfer type chamber

Aki Tosaka, Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

UV light-exited ozone has been applied for rapid low-temperature oxidation of silicon in a wafer-transfer type chamber. Oxidation was made in almost 100% ozone atmosphere with KrF excimer laser (248 nm) which enables the effective supply of O (1D) atoms to the processed surface. In this system, SiO2 film with a thickness of more than 3.5 nm is achieved even as low as 200°C. Uniform 2.9 nm film formation over 5-inch wafer with a thickness fluctuation of 0.1 nm was also obtained when KrF laser irradiation area was enlarged by a cylindrical concave lens. Current-voltage measurement has been employed to characterize SiO2 films and it is confirmed that the catastrophic breakdown field strength was 13 MV/cm. Processing pressure dependence of density of O(1D) atoms which contributing to the oxidation was estimated. Experimental result that the thickness of SiO 2 film increases by decreasing the processing pressure agrees with our estimated result at the pressure range between 340 Pa and 820 Pa.

Original languageEnglish
Pages (from-to)309-312
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Volume48
Issue number5
DOIs
Publication statusPublished - 2005 Jan 1
Externally publishedYes

Fingerprint

Ozone
Silicon
cryogenic temperature
Ultraviolet radiation
ozone
chambers
wafers
Oxidation
oxidation
silicon
Atoms
Temperature
Voltage measurement
Excimer lasers
Electric current measurement
Laser beam effects
Processing
excimer lasers
pressure dependence
electrical measurement

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Ultra-low temperature oxidation of silicon using UV light-exited ozone in wafer-transfer type chamber. / Tosaka, Aki; Nishiguchi, Tetsuya; Nonaka, Hidehiko; Ichimura, Shingo.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 48, No. 5, 01.01.2005, p. 309-312.

Research output: Contribution to journalArticle

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