Ultra-low temperature oxidation of silicon using UV light-exited ozone in wafer-transfer type chamber

Aki Tosaka*, Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


UV light-exited ozone has been applied for rapid low-temperature oxidation of silicon in a wafer-transfer type chamber. Oxidation was made in almost 100% ozone atmosphere with KrF excimer laser (248 nm) which enables the effective supply of O (1D) atoms to the processed surface. In this system, SiO2 film with a thickness of more than 3.5 nm is achieved even as low as 200°C. Uniform 2.9 nm film formation over 5-inch wafer with a thickness fluctuation of 0.1 nm was also obtained when KrF laser irradiation area was enlarged by a cylindrical concave lens. Current-voltage measurement has been employed to characterize SiO2 films and it is confirmed that the catastrophic breakdown field strength was 13 MV/cm. Processing pressure dependence of density of O(1D) atoms which contributing to the oxidation was estimated. Experimental result that the thickness of SiO 2 film increases by decreasing the processing pressure agrees with our estimated result at the pressure range between 340 Pa and 820 Pa.

Original languageEnglish
Pages (from-to)309-312
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Issue number5
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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