TY - JOUR
T1 - Ultra-low thermal conductivity of high-interface density Si/Ge amorphous multilayers
AU - Goto, Masahiro
AU - Xu, Yibin
AU - Zhan, Tianzhuo
AU - Sasaki, Michiko
AU - Nishimura, Chikashi
AU - Kinoshita, Yohei
AU - Ishikiriyama, Mamoru
N1 - Funding Information:
Acknowledgment This work was supported in part by the “Materials research by Information Integration” Initiative (MI2I) project of the Support Program for Starting Up Innovation Hub from Japan Science and Technology Agency (JST).
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - Owing to their phonon scattering and interfacial thermal resistance (ITR) characteristics, inorganic multilayers (MLs) have attracted considerable attention for thermal barrier applications. In this study, a-Si/a-Ge MLs with layer thicknesses ranging from 0.3 to 5 nm and different interfacial elemental mixture states were fabricated using a combinatorial sputter-coating system, and their thermal conductivities were measured via a frequency-domain thermo-reflectance method. An ultra-low thermal conductivity of κ = 0.29 ± 0.01 W K-1 m-1 was achieved for a layer thickness of 0.8 nm. The ITR was found to decrease from 8.5 × 10-9 to 3.6 × 10-9 m2 K W-1 when the interfacial density increases from 0.15 to 0.77 nm-1.
AB - Owing to their phonon scattering and interfacial thermal resistance (ITR) characteristics, inorganic multilayers (MLs) have attracted considerable attention for thermal barrier applications. In this study, a-Si/a-Ge MLs with layer thicknesses ranging from 0.3 to 5 nm and different interfacial elemental mixture states were fabricated using a combinatorial sputter-coating system, and their thermal conductivities were measured via a frequency-domain thermo-reflectance method. An ultra-low thermal conductivity of κ = 0.29 ± 0.01 W K-1 m-1 was achieved for a layer thickness of 0.8 nm. The ITR was found to decrease from 8.5 × 10-9 to 3.6 × 10-9 m2 K W-1 when the interfacial density increases from 0.15 to 0.77 nm-1.
UR - http://www.scopus.com/inward/record.url?scp=85044957148&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85044957148&partnerID=8YFLogxK
U2 - 10.7567/APEX.11.045202
DO - 10.7567/APEX.11.045202
M3 - Article
AN - SCOPUS:85044957148
SN - 1882-0778
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
IS - 4
M1 - 045202
ER -