Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Tomonari Sato; Koji Takeda; Akihiko Shinya; Kengo Nozaki; Hideaki Taniyama; Koichi Hasebe; Takaaki Kakitsuka; Masaya Notomi; Shinji Matsuo

doi:10.1109/ISLC.2012.6348388

Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Tomonari Sato^*, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

Original language	English
Article number	6348388
Pages (from-to)	169-170
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC.2012.6348388
Publication status	Published - 2012
Externally published	Yes
Event	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States Duration: 2012 Oct 7 → 2012 Oct 10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer",

abstract = "An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.",

author = "Tomonari Sato and Koji Takeda and Akihiko Shinya and Kengo Nozaki and Hideaki Taniyama and Koichi Hasebe and Takaaki Kakitsuka and Masaya Notomi and Shinji Matsuo",

year = "2012",

doi = "10.1109/ISLC.2012.6348388",

language = "English",

pages = "169--170",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "23rd IEEE International Semiconductor Laser Conference, ISLC 2012 ; Conference date: 07-10-2012 Through 10-10-2012",

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T1 - Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

AU - Sato, Tomonari

AU - Takeda, Koji

AU - Shinya, Akihiko

AU - Nozaki, Kengo

AU - Taniyama, Hideaki

AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

AU - Matsuo, Shinji

PY - 2012

Y1 - 2012

N2 - An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

AB - An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

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DO - 10.1109/ISLC.2012.6348388

M3 - Conference article

AN - SCOPUS:84870581662

SN - 0899-9406

SP - 169

EP - 170

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

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T2 - 23rd IEEE International Semiconductor Laser Conference, ISLC 2012

Y2 - 7 October 2012 through 10 October 2012

ER -

Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Abstract

ASJC Scopus subject areas

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