Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

Original languageEnglish
Article number6348388
Pages (from-to)169-170
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
DOIs
Publication statusPublished - 2012 Dec 11
Externally publishedYes
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 2012 Oct 72012 Oct 10

Fingerprint

Photonic crystals
threshold currents
Leakage currents
continuous radiation
leakage
photonics
Lasers
room temperature
crystals
lasers
Temperature

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer. / Sato, Tomonari; Takeda, Koji; Shinya, Akihiko; Nozaki, Kengo; Taniyama, Hideaki; Hasebe, Koichi; Kakitsuka, Takaaki; Notomi, Masaya; Matsuo, Shinji.

In: Conference Digest - IEEE International Semiconductor Laser Conference, 11.12.2012, p. 169-170.

Research output: Contribution to journalConference article

Sato, Tomonari ; Takeda, Koji ; Shinya, Akihiko ; Nozaki, Kengo ; Taniyama, Hideaki ; Hasebe, Koichi ; Kakitsuka, Takaaki ; Notomi, Masaya ; Matsuo, Shinji. / Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer. In: Conference Digest - IEEE International Semiconductor Laser Conference. 2012 ; pp. 169-170.
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