Ultra-low voltage 15-GHz band best Fom < −190 dBC/Hz LC-VCO ICs with novel harmonic tuned LC tank in 45-nm SOI CMOS

Xiao Xu, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Contribution to journalArticle

Abstract

This paper presents two ultra-low voltage and high performance VCO ICs with novel harmonic tuned LC tank which provides different harmonic impedance and shapes the pseudo-square drain voltage waveform of transistors. In the novel tank, two additional inductors are connected between the drains of the cross-coupled pMOSFETs and the conventional LC tank, and they effectively decrease second harmonic load impedance and increase third harmonic load impedance of the transistors. In this paper, the novel harmonic tuned LC tank is applied to two different structure VCOs. These two VCOs exhibit over 2 dB better phase noise performance than conventional LC tank VCOs among all tuning range. The conventional and proposed VCO ICs are designed, fabricated and measured on wafer in 45-nm SOI CMOS technology. With novel harmonic tuned LC tank, the novel two VCOs exhibit measured best phase-noise of −125.7 and −129.3 dBc/Hz at 10 MHz offset and related FoM of −190.2 and −190.5 dBc/Hz at a supply voltage of 0.3 V and 0.35 V, respectively. Frequency tuning range of the two VCOs are from 13.01 to 14.34 GHz and from 15.02 to 16.03GHz, respectively.

Original languageEnglish
Pages (from-to)673-681
Number of pages9
JournalIEICE Transactions on Electronics
VolumeE102C
Issue number10
DOIs
Publication statusPublished - 2019 Jan 1

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Variable frequency oscillators
Electric potential
Phase noise
Transistors
Tuning

Keywords

  • 45-nm SOI CMOS
  • Drain inductor
  • Harmonic tuned LC tank
  • LC-VCO
  • Low power
  • Low voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ultra-low voltage 15-GHz band best Fom < −190 dBC/Hz LC-VCO ICs with novel harmonic tuned LC tank in 45-nm SOI CMOS. / Xu, Xiao; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.

In: IEICE Transactions on Electronics, Vol. E102C, No. 10, 01.01.2019, p. 673-681.

Research output: Contribution to journalArticle

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