Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Tsuyoshi Hasegawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

Original languageEnglish
Pages (from-to)6029-6033
Number of pages5
JournalAdvanced Materials
Volume27
Issue number39
DOIs
Publication statusPublished - 2015 Oct 1

Keywords

  • ReRAM
  • atomic switches
  • low voltage
  • redox
  • three terminal

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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