Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Tsuyoshi Hasegawa

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

    Original languageEnglish
    Pages (from-to)6029-6033
    Number of pages5
    JournalAdvanced Materials
    Volume27
    Issue number39
    DOIs
    Publication statusPublished - 2015 Oct 1

    Fingerprint

    Leakage currents
    Electric power utilization
    Switches
    Electric potential

    Keywords

    • atomic switches
    • low voltage
    • redox
    • ReRAM
    • three terminal

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch. / Wang, Qi; Itoh, Yaomi; Tsuruoka, Tohru; Aono, Masakazu; Hasegawa, Tsuyoshi.

    In: Advanced Materials, Vol. 27, No. 39, 01.10.2015, p. 6029-6033.

    Research output: Contribution to journalArticle

    Wang, Qi ; Itoh, Yaomi ; Tsuruoka, Tohru ; Aono, Masakazu ; Hasegawa, Tsuyoshi. / Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch. In: Advanced Materials. 2015 ; Vol. 27, No. 39. pp. 6029-6033.
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