Ultrafast exciton spin relaxation in GaAs/AlGaAs and CdMnTe multiple quantum wells

Y. Takagi, S. Adachi, S. Takeyama, Atsushi Tackeuchi, S. Muto, J. J. Dubowski

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the direct observation of ultrafast spin relaxation of both the heavy-hole and the light-hole excitons in GaAs/AlGaAs multiple quantum wells (MQW) at room temperature using the femtosecond absorption bleaching detection. Also, we report on the time-resolved reflection measurements in CdMnTe MQW. A vareity of polarization-dependent and wavelength-dependent time profiles are observed in the picosecond time region.

Original languageEnglish
Pages (from-to)202-205
Number of pages4
JournalJournal of Luminescence
Volume58
Issue number1-6
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Semiconductor quantum wells
aluminum gallium arsenides
excitons
quantum wells
Bleaching
bleaching
Polarization
Wavelength
Observation
Temperature
room temperature
polarization
profiles
wavelengths
gallium arsenide
LDS 751

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Ultrafast exciton spin relaxation in GaAs/AlGaAs and CdMnTe multiple quantum wells. / Takagi, Y.; Adachi, S.; Takeyama, S.; Tackeuchi, Atsushi; Muto, S.; Dubowski, J. J.

In: Journal of Luminescence, Vol. 58, No. 1-6, 1994, p. 202-205.

Research output: Contribution to journalArticle

Takagi, Y. ; Adachi, S. ; Takeyama, S. ; Tackeuchi, Atsushi ; Muto, S. ; Dubowski, J. J. / Ultrafast exciton spin relaxation in GaAs/AlGaAs and CdMnTe multiple quantum wells. In: Journal of Luminescence. 1994 ; Vol. 58, No. 1-6. pp. 202-205.
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AU - Dubowski, J. J.

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