Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications

Atsushi Tackeuchi, Osamu Wada, Yuji Nishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.

Original languageEnglish
Title of host publicationUltrafast Electronics and Optoelectronics, UEO 1997
PublisherOptica Publishing Group (formerly OSA)
Pages268-271
Number of pages4
ISBN (Electronic)9781557528209
Publication statusPublished - 1997
EventUltrafast Electronics and Optoelectronics, UEO 1997 - Incline Village, United States
Duration: 1997 Mar 171997 Mar 17

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceUltrafast Electronics and Optoelectronics, UEO 1997
Country/TerritoryUnited States
CityIncline Village
Period97/3/1797/3/17

Keywords

  • All-optical devices
  • Semiconductor nonlinear optics including MQW
  • Ultrafast devices
  • Ultrafast processes in condensed matter

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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