Ultrafast spin relaxation in quantum-confined structures for all-optical switching

Osamu Wada; Atsushi Tackeuchi; Yuji Nishikawa; Tetsuya Nishimura

doi:10.1117/12.316711

Ultrafast spin relaxation in quantum-confined structures for all-optical switching

Osamu Wada^*, Atsushi Tackeuchi, Yuji Nishikawa, Tetsuya Nishimura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.

Original language	English
Pages (from-to)	602-613
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3283
DOIs	https://doi.org/10.1117/12.316711
Publication status	Published - 1998 Dec 1
Event	Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: 1998 Jan 26 → 1998 Jan 26

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.316711

Cite this

@article{76b4489c35da4e2590e168716fb14665,

title = "Ultrafast spin relaxation in quantum-confined structures for all-optical switching",

abstract = "Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.",

author = "Osamu Wada and Atsushi Tackeuchi and Yuji Nishikawa and Tetsuya Nishimura",

year = "1998",

month = dec,

day = "1",

doi = "10.1117/12.316711",

language = "English",

volume = "3283",

pages = "602--613",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics and Simulation of Optoelectronic Devices VI ; Conference date: 26-01-1998 Through 26-01-1998",

}

TY - JOUR

T1 - Ultrafast spin relaxation in quantum-confined structures for all-optical switching

AU - Wada, Osamu

AU - Tackeuchi, Atsushi

AU - Nishikawa, Yuji

AU - Nishimura, Tetsuya

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.

AB - Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.

UR - http://www.scopus.com/inward/record.url?scp=10344261949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10344261949&partnerID=8YFLogxK

U2 - 10.1117/12.316711

DO - 10.1117/12.316711

M3 - Conference article

AN - SCOPUS:10344261949

SN - 0277-786X

VL - 3283

SP - 602

EP - 613

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices VI

Y2 - 26 January 1998 through 26 January 1998

ER -

Ultrafast spin relaxation in quantum-confined structures for all-optical switching

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this