Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki; T. Aihara; K. Hasebe; T. Fujii; K. Takeda; T. Tsuchizawa; Takaaki Kakitsuka; H. Fukuda; S. Matsuo

doi:10.1117/12.2312315

Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki^*, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, Takaaki Kakitsuka, H. Fukuda, S. Matsuo

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows V_πL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.

Original language	English
Title of host publication	Silicon Photonics
Subtitle of host publication	From Fundamental Research to Manufacturing
Editors	Laurent Vivien, Peter O'Brien, Roel G. Baets
Publisher	SPIE
ISBN (Print)	9781510618985
DOIs	https://doi.org/10.1117/12.2312315
Publication status	Published - 2018 Jan 1
Externally published	Yes
Event	Silicon Photonics: From Fundamental Research to Manufacturing 2018 - Strasbourg, France Duration: 2018 Apr 23 → 2018 Apr 26

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10686
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Silicon Photonics: From Fundamental Research to Manufacturing 2018
Country/Territory	France
City	Strasbourg
Period	18/4/23 → 18/4/26

Keywords

Mach-Zehnder modulator
Si photonics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2312315

Cite this

Hiraki, T., Aihara, T., Hasebe, K., Fujii, T., Takeda, K., Tsuchizawa, T., Kakitsuka, T., Fukuda, H., & Matsuo, S. (2018). Ultrahigh efficiency III-V on Si MOS capacitor optical modulator. In L. Vivien, P. O'Brien, & R. G. Baets (Eds.), Silicon Photonics: From Fundamental Research to Manufacturing [106860K] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10686). SPIE. https://doi.org/10.1117/12.2312315

Ultrahigh efficiency III-V on Si MOS capacitor optical modulator. / Hiraki, T.; Aihara, T.; Hasebe, K. et al.

Silicon Photonics: From Fundamental Research to Manufacturing. ed. / Laurent Vivien; Peter O'Brien; Roel G. Baets. SPIE, 2018. 106860K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10686).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiraki, T, Aihara, T, Hasebe, K, Fujii, T, Takeda, K, Tsuchizawa, T, Kakitsuka, T, Fukuda, H & Matsuo, S 2018, Ultrahigh efficiency III-V on Si MOS capacitor optical modulator. in L Vivien, P O'Brien & RG Baets (eds), Silicon Photonics: From Fundamental Research to Manufacturing., 106860K, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10686, SPIE, Silicon Photonics: From Fundamental Research to Manufacturing 2018, Strasbourg, France, 18/4/23. https://doi.org/10.1117/12.2312315

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abstract = "A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.",

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AU - Hiraki, T.

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AU - Kakitsuka, Takaaki

AU - Fukuda, H.

AU - Matsuo, S.

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N2 - A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.

AB - A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.

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Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

Abstract

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Keywords

ASJC Scopus subject areas

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