Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, Takaaki Kakitsuka, H. Fukuda, S. Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.

Original languageEnglish
Title of host publicationSilicon Photonics
Subtitle of host publicationFrom Fundamental Research to Manufacturing
EditorsLaurent Vivien, Peter O'Brien, Roel G. Baets
PublisherSPIE
ISBN (Print)9781510618985
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes
EventSilicon Photonics: From Fundamental Research to Manufacturing 2018 - Strasbourg, France
Duration: 2018 Apr 232018 Apr 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10686
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSilicon Photonics: From Fundamental Research to Manufacturing 2018
CountryFrance
CityStrasbourg
Period18/4/2318/4/26

Keywords

  • Mach-Zehnder modulator
  • Si photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hiraki, T., Aihara, T., Hasebe, K., Fujii, T., Takeda, K., Tsuchizawa, T., Kakitsuka, T., Fukuda, H., & Matsuo, S. (2018). Ultrahigh efficiency III-V on Si MOS capacitor optical modulator. In L. Vivien, P. O'Brien, & R. G. Baets (Eds.), Silicon Photonics: From Fundamental Research to Manufacturing [106860K] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10686). SPIE. https://doi.org/10.1117/12.2312315