Ultrahigh vacuum atomic force microscope using a pantograph inchworm mechanism

Sumio Hosaka, Yukio Honda, Tsuyoshi Hasegawa, Tatsuharu Yamamoto, Masayoshi Kondo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

An ultrahigh vacuum atomic force microscope (UHV-AFM) with tunneling current detection has been developed. This microscope uses a new type of pantograph inchworm system. The features of the inchworm system are (i) operation of the clamp in normal clamping mode, (ii) an enlargement of the piezo device stroke for clamper stroke, and (iii) compact system for easy use. Our UHV-AFM has (i) six inchworm movements based on the new mechanism, and (ii) a sharp AFM probe whose tip is machined by a focused ion beam fabrication technique. UHV pressure experiments demonstrate that this system provides a contamination-free surface and can observe atomic resolution AFM images of MoS2 and silicon carbide.

Original languageEnglish
Pages (from-to)3524-3529
Number of pages6
JournalReview of Scientific Instruments
Volume64
Issue number12
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Pantographs
Ultrahigh vacuum
ultrahigh vacuum
Microscopes
microscopes
strokes
atomic force microscopy
clamps
Focused ion beams
Clamping devices
Image resolution
Silicon carbide
silicon carbides
carbides
contamination
Contamination
ion beams
Fabrication
fabrication
probes

ASJC Scopus subject areas

  • Instrumentation
  • Physics and Astronomy (miscellaneous)

Cite this

Ultrahigh vacuum atomic force microscope using a pantograph inchworm mechanism. / Hosaka, Sumio; Honda, Yukio; Hasegawa, Tsuyoshi; Yamamoto, Tatsuharu; Kondo, Masayoshi.

In: Review of Scientific Instruments, Vol. 64, No. 12, 1993, p. 3524-3529.

Research output: Contribution to journalArticle

Hosaka, Sumio ; Honda, Yukio ; Hasegawa, Tsuyoshi ; Yamamoto, Tatsuharu ; Kondo, Masayoshi. / Ultrahigh vacuum atomic force microscope using a pantograph inchworm mechanism. In: Review of Scientific Instruments. 1993 ; Vol. 64, No. 12. pp. 3524-3529.
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