Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections

K. Uomi, T. Tsuchiya, Toshihiro Kawano, K. Nakahara, A. Niwa, A. Oishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnection. It is indicated that the threshold current should be lower than about 3.0, 1.4 and 0.7 mA at 25°C for 200 and 500 Mbits/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 85°C with a shorter turn-on delay time. This paper reviews the ultralow threshold properties of 1.3-μm strained-multi-quantum-well laser. The active width and the number of quantum wells are optimized based on theoretical model to reduce the threshold current. The drastic reduction in threshold current due to the strain-induced effect is achieved with an optimized strain value of 1.4%. Thus, this array is suitable as a light source for practical use in high-speed parallel optical data link applications.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
PublisherIEEE
Pages105-106
Number of pages2
Volume1
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: 1995 Oct 301995 Nov 2

Other

OtherProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2)
CitySan Francisco, CA, USA
Period95/10/3095/11/2

Fingerprint

Optical interconnects
Quantum well lasers
Lasers
Semiconductor quantum wells
Light sources
Semiconductor lasers
Time delay
Substrates

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Uomi, K., Tsuchiya, T., Kawano, T., Nakahara, K., Niwa, A., & Oishi, A. (1995). Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 1, pp. 105-106). IEEE.

Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections. / Uomi, K.; Tsuchiya, T.; Kawano, Toshihiro; Nakahara, K.; Niwa, A.; Oishi, A.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 IEEE, 1995. p. 105-106.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uomi, K, Tsuchiya, T, Kawano, T, Nakahara, K, Niwa, A & Oishi, A 1995, Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 1, IEEE, pp. 105-106, Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2), San Francisco, CA, USA, 95/10/30.
Uomi K, Tsuchiya T, Kawano T, Nakahara K, Niwa A, Oishi A. Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1. IEEE. 1995. p. 105-106
Uomi, K. ; Tsuchiya, T. ; Kawano, Toshihiro ; Nakahara, K. ; Niwa, A. ; Oishi, A. / Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 IEEE, 1995. pp. 105-106
@inproceedings{4755cf7c22ae4feabbc893da83f99338,
title = "Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections",
abstract = "A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnection. It is indicated that the threshold current should be lower than about 3.0, 1.4 and 0.7 mA at 25°C for 200 and 500 Mbits/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 85°C with a shorter turn-on delay time. This paper reviews the ultralow threshold properties of 1.3-μm strained-multi-quantum-well laser. The active width and the number of quantum wells are optimized based on theoretical model to reduce the threshold current. The drastic reduction in threshold current due to the strain-induced effect is achieved with an optimized strain value of 1.4{\%}. Thus, this array is suitable as a light source for practical use in high-speed parallel optical data link applications.",
author = "K. Uomi and T. Tsuchiya and Toshihiro Kawano and K. Nakahara and A. Niwa and A. Oishi",
year = "1995",
language = "English",
volume = "1",
pages = "105--106",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
publisher = "IEEE",

}

TY - GEN

T1 - Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections

AU - Uomi, K.

AU - Tsuchiya, T.

AU - Kawano, Toshihiro

AU - Nakahara, K.

AU - Niwa, A.

AU - Oishi, A.

PY - 1995

Y1 - 1995

N2 - A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnection. It is indicated that the threshold current should be lower than about 3.0, 1.4 and 0.7 mA at 25°C for 200 and 500 Mbits/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 85°C with a shorter turn-on delay time. This paper reviews the ultralow threshold properties of 1.3-μm strained-multi-quantum-well laser. The active width and the number of quantum wells are optimized based on theoretical model to reduce the threshold current. The drastic reduction in threshold current due to the strain-induced effect is achieved with an optimized strain value of 1.4%. Thus, this array is suitable as a light source for practical use in high-speed parallel optical data link applications.

AB - A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnection. It is indicated that the threshold current should be lower than about 3.0, 1.4 and 0.7 mA at 25°C for 200 and 500 Mbits/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 85°C with a shorter turn-on delay time. This paper reviews the ultralow threshold properties of 1.3-μm strained-multi-quantum-well laser. The active width and the number of quantum wells are optimized based on theoretical model to reduce the threshold current. The drastic reduction in threshold current due to the strain-induced effect is achieved with an optimized strain value of 1.4%. Thus, this array is suitable as a light source for practical use in high-speed parallel optical data link applications.

UR - http://www.scopus.com/inward/record.url?scp=0029490196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029490196&partnerID=8YFLogxK

M3 - Conference contribution

VL - 1

SP - 105

EP - 106

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

PB - IEEE

ER -