Abstract
A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnection. It is indicated that the threshold current should be lower than about 3.0, 1.4 and 0.7 mA at 25°C for 200 and 500 Mbits/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 85°C with a shorter turn-on delay time. This paper reviews the ultralow threshold properties of 1.3-μm strained-multi-quantum-well laser. The active width and the number of quantum wells are optimized based on theoretical model to reduce the threshold current. The drastic reduction in threshold current due to the strain-induced effect is achieved with an optimized strain value of 1.4%. Thus, this array is suitable as a light source for practical use in high-speed parallel optical data link applications.
| Original language | English |
|---|---|
| Pages (from-to) | 105-106 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| Publication status | Published - 1995 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA Duration: 1995 Oct 30 → 1995 Nov 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering