Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, Toshihiro Kawano, A. Oishi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalIEEE Photonics Technology Letters
Volume7
Issue number1
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

optical interconnects
Optical interconnects
laser arrays
threshold currents
Light sources
RNA
thresholds
Lasers
optical density
light sources
slopes
optimization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects. / Uomi, K.; Tsuchiya, T.; Komori, M.; Oka, A.; Kawano, Toshihiro; Oishi, A.

In: IEEE Photonics Technology Letters, Vol. 7, No. 1, 1995, p. 1-3.

Research output: Contribution to journalArticle

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AU - Kawano, Toshihiro

AU - Oishi, A.

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