Abstract
An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.
Original language | English |
---|---|
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 7 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1995 Jan |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering