Abstract
An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.
| Original language | English |
|---|---|
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1995 Jan |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Cite this
Uomi, K., Tsuchiya, T., Komori, M., Oka, A., Kawano, T., & Oishi, A. (1995). Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects. IEEE Photonics Technology Letters, 7(1), 1-3. https://doi.org/10.1109/68.363395