Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects

K. Uomi; T. Tsuchiya; M. Komori; A. Oka; T. Kawano; A. Oishi

doi:10.1109/68.363395

Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, T. Kawano, A. Oishi

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	1
DOIs	https://doi.org/10.1109/68.363395
Publication status	Published - 1995 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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AU - Komori, M.

AU - Oka, A.

AU - Kawano, T.

AU - Oishi, A.

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AB - An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.

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Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects

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