Abstract
An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.
| Original language | English |
|---|---|
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1995 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)
Cite this
Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects. / Uomi, K.; Tsuchiya, T.; Komori, M.; Oka, A.; Kawano, Toshihiro; Oishi, A.
In: IEEE Photonics Technology Letters, Vol. 7, No. 1, 1995, p. 1-3.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects
AU - Uomi, K.
AU - Tsuchiya, T.
AU - Komori, M.
AU - Oka, A.
AU - Kawano, Toshihiro
AU - Oishi, A.
PY - 1995
Y1 - 1995
N2 - An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.
AB - An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.
UR - http://www.scopus.com/inward/record.url?scp=0029185145&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029185145&partnerID=8YFLogxK
U2 - 10.1109/68.363395
DO - 10.1109/68.363395
M3 - Article
AN - SCOPUS:0029185145
VL - 7
SP - 1
EP - 3
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 1
ER -