Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias

Y. Yamamoto; H. Makiyama; H. Shinohara; T. Iwamatsu; H. Oda; S. Kamohara; N. Sugii; Y. Yamaguchi; T. Mizutani; T. Hiramoto

Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias

Y. Yamamoto, H. Makiyama, H. Shinohara, T. Iwamatsu, H. Oda, S. Kamohara, N. Sugii, Y. Yamaguchi, T. Mizutani, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

54 Citations (Scopus)

Abstract

We demonstrated record 0.37V minimum operation voltage (V_min) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks to the small variability of SOTB (A_VT∼1.3 mVμm) and adaptive back biasing (ABB), V_min was lowered down to ∼0.4 V regardless of temperature. Both fast access time and small standby leakage were achieved by ABB.

Original language	English
Title of host publication	2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
Pages	T212-T213
Publication status	Published - 2013
Externally published	Yes
Event	2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan Duration: 2013 Jun 11 → 2013 Jun 13

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2013 Symposium on VLSI Technology, VLSIT 2013
Country/Territory	Japan
City	Kyoto
Period	13/6/11 → 13/6/13

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Yamamoto, Y., Makiyama, H., Shinohara, H., Iwamatsu, T., Oda, H., Kamohara, S., Sugii, N., Yamaguchi, Y., Mizutani, T., & Hiramoto, T. (2013). Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers (pp. T212-T213). [6576627] (Digest of Technical Papers - Symposium on VLSI Technology).

Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias. / Yamamoto, Y.; Makiyama, H.; Shinohara, H. et al.

2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T212-T213 6576627 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, Y, Makiyama, H, Shinohara, H, Iwamatsu, T, Oda, H, Kamohara, S, Sugii, N, Yamaguchi, Y, Mizutani, T & Hiramoto, T 2013, Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias. in 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers., 6576627, Digest of Technical Papers - Symposium on VLSI Technology, pp. T212-T213, 2013 Symposium on VLSI Technology, VLSIT 2013, Kyoto, Japan, 13/6/11.

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abstract = "We demonstrated record 0.37V minimum operation voltage (Vmin) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks to the small variability of SOTB (AVT∼1.3 mVμm) and adaptive back biasing (ABB), Vmin was lowered down to ∼0.4 V regardless of temperature. Both fast access time and small standby leakage were achieved by ABB.",

author = "Y. Yamamoto and H. Makiyama and H. Shinohara and T. Iwamatsu and H. Oda and S. Kamohara and N. Sugii and Y. Yamaguchi and T. Mizutani and T. Hiramoto",

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language = "English",

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series = "Digest of Technical Papers - Symposium on VLSI Technology",

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AU - Shinohara, H.

AU - Iwamatsu, T.

AU - Oda, H.

AU - Kamohara, S.

AU - Sugii, N.

AU - Yamaguchi, Y.

AU - Mizutani, T.

AU - Hiramoto, T.

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AB - We demonstrated record 0.37V minimum operation voltage (Vmin) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks to the small variability of SOTB (AVT∼1.3 mVμm) and adaptive back biasing (ABB), Vmin was lowered down to ∼0.4 V regardless of temperature. Both fast access time and small standby leakage were achieved by ABB.

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BT - 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers

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Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias

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