Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima; Hiroshi Ashihara; Atsushi Hiraiwa; Toshiyuki Mine; Yasushi Goto

doi:10.1109/TED.2005.848081

Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima^*, Hiroshi Ashihara, Atsushi Hiraiwa, Toshiyuki Mine, Yasushi Goto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The V_th rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

Original language	English
Pages (from-to)	1165-1171
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	6
DOIs	https://doi.org/10.1109/TED.2005.848081
Publication status	Published - 2005 Jun
Externally published	Yes

Keywords

Amorphous materials
Complementary metal-oxide semiconductor (CMOS) integrated circuits
Laser annealing
Preamorphization implantation
Rapid thermal annealed (RTA)
Ultrashallow junction
YAG lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)

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10.1109/TED.2005.848081

Cite this

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abstract = "We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.",

keywords = "Amorphous materials, Complementary metal-oxide semiconductor (CMOS) integrated circuits, Laser annealing, Preamorphization implantation, Rapid thermal annealed (RTA), Ultrashallow junction, YAG lasers",

author = "Akio Shima and Hiroshi Ashihara and Atsushi Hiraiwa and Toshiyuki Mine and Yasushi Goto",

year = "2005",

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language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Shima, Akio

AU - Ashihara, Hiroshi

AU - Hiraiwa, Atsushi

AU - Mine, Toshiyuki

AU - Goto, Yasushi

PY - 2005/6

Y1 - 2005/6

N2 - We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

AB - We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

KW - Amorphous materials

KW - Complementary metal-oxide semiconductor (CMOS) integrated circuits

KW - Laser annealing

KW - Preamorphization implantation

KW - Rapid thermal annealed (RTA)

KW - Ultrashallow junction

KW - YAG lasers

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Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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