Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima, Hiroshi Ashihara, Atsushi Hiraiwa, Toshiyuki Mine, Yasushi Goto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

Original languageEnglish
Pages (from-to)1165-1171
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number6
DOIs
Publication statusPublished - 2005 Jun
Externally publishedYes

Fingerprint

field effect transistors
Lasers
implantation
lasers
MOS devices
Industrial heating
Rapid thermal annealing
Drain current
semiconductor devices
spacers
halos
absorbers
CMOS
fluence
switches
Switches
heat
annealing
heating
Hot Temperature

Keywords

  • Amorphous materials
  • Complementary metal-oxide semiconductor (CMOS) integrated circuits
  • Laser annealing
  • Preamorphization implantation
  • Rapid thermal annealed (RTA)
  • Ultrashallow junction
  • YAG lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs. / Shima, Akio; Ashihara, Hiroshi; Hiraiwa, Atsushi; Mine, Toshiyuki; Goto, Yasushi.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 6, 06.2005, p. 1165-1171.

Research output: Contribution to journalArticle

Shima, Akio ; Ashihara, Hiroshi ; Hiraiwa, Atsushi ; Mine, Toshiyuki ; Goto, Yasushi. / Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs. In: IEEE Transactions on Electron Devices. 2005 ; Vol. 52, No. 6. pp. 1165-1171.
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