Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

Yoshikatsu Jingu, Kazuyuki Hirama, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

    Original languageEnglish
    Article number4
    Pages (from-to)966-972
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume57
    Issue number5
    DOIs
    Publication statusPublished - 2010 May

    Fingerprint

    Titanium carbide
    Diamond
    Hydrogenation
    Diamonds
    Fabrication
    Hydrogen
    Ohmic contacts
    Aluminum Oxide
    Drain current
    Transconductance
    Contact resistance
    Field effect transistors
    Oxides
    Alumina
    Oxygen
    titanium carbide

    Keywords

    • Contact
    • Diamond
    • Hydrogen
    • MOSFET
    • TiC

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach. / Jingu, Yoshikatsu; Hirama, Kazuyuki; Kawarada, Hiroshi.

    In: IEEE Transactions on Electron Devices, Vol. 57, No. 5, 4, 05.2010, p. 966-972.

    Research output: Contribution to journalArticle

    @article{dd2f3c53026c4fb4b16a80b8212c933d,
    title = "Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach",
    abstract = "Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.",
    keywords = "Contact, Diamond, Hydrogen, MOSFET, TiC",
    author = "Yoshikatsu Jingu and Kazuyuki Hirama and Hiroshi Kawarada",
    year = "2010",
    month = "5",
    doi = "10.1109/TED.2010.2043311",
    language = "English",
    volume = "57",
    pages = "966--972",
    journal = "IEEE Transactions on Electron Devices",
    issn = "0018-9383",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "5",

    }

    TY - JOUR

    T1 - Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

    AU - Jingu, Yoshikatsu

    AU - Hirama, Kazuyuki

    AU - Kawarada, Hiroshi

    PY - 2010/5

    Y1 - 2010/5

    N2 - Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

    AB - Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

    KW - Contact

    KW - Diamond

    KW - Hydrogen

    KW - MOSFET

    KW - TiC

    UR - http://www.scopus.com/inward/record.url?scp=77951620433&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77951620433&partnerID=8YFLogxK

    U2 - 10.1109/TED.2010.2043311

    DO - 10.1109/TED.2010.2043311

    M3 - Article

    AN - SCOPUS:77951620433

    VL - 57

    SP - 966

    EP - 972

    JO - IEEE Transactions on Electron Devices

    JF - IEEE Transactions on Electron Devices

    SN - 0018-9383

    IS - 5

    M1 - 4

    ER -