Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

Yoshikatsu Jingu; Kazuyuki Hirama; Hiroshi Kawarada

doi:10.1109/TED.2010.2043311

Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

Yoshikatsu Jingu^*, Kazuyuki Hirama, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10^-7-7 × 10^-7 Ω · cm². For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An f_T of 6.2 GHz and an f_max of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

Original language	English
Article number	4
Pages (from-to)	966-972
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	5
DOIs	https://doi.org/10.1109/TED.2010.2043311
Publication status	Published - 2010 May

Keywords

Contact
Diamond
Hydrogen
MOSFET
TiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2010.2043311

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title = "Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach",

abstract = "Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.",

keywords = "Contact, Diamond, Hydrogen, MOSFET, TiC",

author = "Yoshikatsu Jingu and Kazuyuki Hirama and Hiroshi Kawarada",

note = "Funding Information: Manuscript received November 25, 2009. Current version published April 21, 2010. This work was done in School of Science and Engineering, Waseda University and supported in part by the Japanese Ministry of Education, Science, Sports and Culture through the Grant-in-Aid for Scientific Research S under Contract 19106006. The review of this paper was arranged by Editor M. Anwar.",

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AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received November 25, 2009. Current version published April 21, 2010. This work was done in School of Science and Engineering, Waseda University and supported in part by the Japanese Ministry of Education, Science, Sports and Culture through the Grant-in-Aid for Scientific Research S under Contract 19106006. The review of this paper was arranged by Editor M. Anwar.

PY - 2010/5

Y1 - 2010/5

N2 - Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

AB - Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

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KW - Diamond

KW - Hydrogen

KW - MOSFET

KW - TiC

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Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

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Keywords

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