Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa, T. Maeda, K. Sakamoto, H. Itoh, K. Nakamura, K. Koike, D. W. Moon, Y. H. Ha, Shingo Ichimura, A. Ando

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume567
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 8

Fingerprint

Ozone
International System of Units
Silicon Dioxide
Oxides
ozone
Silica
silicon dioxide
oxides
Oxidation
oxidation
Silicon
Stoichiometry
Topography
stoichiometry
topography
X ray photoelectron spectroscopy
Gases
silicon
Substrates
gases

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kurokawa, A., Maeda, T., Sakamoto, K., Itoh, H., Nakamura, K., Koike, K., ... Ando, A. (1999). Ultrathin silicon dioxide formation by ozone on ultraflat SI surface. Materials Research Society Symposium - Proceedings, 567, 21-26.

Ultrathin silicon dioxide formation by ozone on ultraflat SI surface. / Kurokawa, A.; Maeda, T.; Sakamoto, K.; Itoh, H.; Nakamura, K.; Koike, K.; Moon, D. W.; Ha, Y. H.; Ichimura, Shingo; Ando, A.

In: Materials Research Society Symposium - Proceedings, Vol. 567, 01.12.1999, p. 21-26.

Research output: Contribution to journalConference article

Kurokawa, A, Maeda, T, Sakamoto, K, Itoh, H, Nakamura, K, Koike, K, Moon, DW, Ha, YH, Ichimura, S & Ando, A 1999, 'Ultrathin silicon dioxide formation by ozone on ultraflat SI surface', Materials Research Society Symposium - Proceedings, vol. 567, pp. 21-26.
Kurokawa A, Maeda T, Sakamoto K, Itoh H, Nakamura K, Koike K et al. Ultrathin silicon dioxide formation by ozone on ultraflat SI surface. Materials Research Society Symposium - Proceedings. 1999 Dec 1;567:21-26.
Kurokawa, A. ; Maeda, T. ; Sakamoto, K. ; Itoh, H. ; Nakamura, K. ; Koike, K. ; Moon, D. W. ; Ha, Y. H. ; Ichimura, Shingo ; Ando, A. / Ultrathin silicon dioxide formation by ozone on ultraflat SI surface. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 567. pp. 21-26.
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AU - Maeda, T.

AU - Sakamoto, K.

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AU - Koike, K.

AU - Moon, D. W.

AU - Ha, Y. H.

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N2 - We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

AB - We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

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