Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Qing Yang, XiaoHong H. Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, ShuHua H. Liang

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

    Original languageEnglish
    Pages (from-to)2500-2503
    Number of pages4
    JournalScience China Technological Sciences
    Volume57
    Issue number12
    DOIs
    Publication statusPublished - 2014 Dec 11

    Fingerprint

    Gallium
    Oxidation
    Composite structures
    Full width at half maximum
    Excitons
    Photoluminescence
    Optical properties
    Temperature
    Substrates
    Hot Temperature
    LDS 751

    Keywords

    • gallium
    • photoluminescence
    • thermal oxidation
    • ultraviolet
    • ZnO layer

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium. / Yang, Qing; Zhou, XiaoHong H.; Nukui, Takao; Saeki, Yu; Izumi, Sotaro; Tackeuchi, Atsushi; Tatsuoka, Hirokazu; Liang, ShuHua H.

    In: Science China Technological Sciences, Vol. 57, No. 12, 11.12.2014, p. 2500-2503.

    Research output: Contribution to journalArticle

    Yang, Q, Zhou, XH, Nukui, T, Saeki, Y, Izumi, S, Tackeuchi, A, Tatsuoka, H & Liang, SH 2014, 'Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium', Science China Technological Sciences, vol. 57, no. 12, pp. 2500-2503. https://doi.org/10.1007/s11431-014-5714-y
    Yang, Qing ; Zhou, XiaoHong H. ; Nukui, Takao ; Saeki, Yu ; Izumi, Sotaro ; Tackeuchi, Atsushi ; Tatsuoka, Hirokazu ; Liang, ShuHua H. / Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium. In: Science China Technological Sciences. 2014 ; Vol. 57, No. 12. pp. 2500-2503.
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    AU - Yang, Qing

    AU - Zhou, XiaoHong H.

    AU - Nukui, Takao

    AU - Saeki, Yu

    AU - Izumi, Sotaro

    AU - Tackeuchi, Atsushi

    AU - Tatsuoka, Hirokazu

    AU - Liang, ShuHua H.

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