Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Qing Yang, Xiao Hong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shu Hua Liang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

Original languageEnglish
Pages (from-to)2500-2503
Number of pages4
JournalScience China Technological Sciences
Volume57
Issue number12
DOIs
Publication statusPublished - 2014 Dec 11

Keywords

  • ZnO layer
  • gallium
  • photoluminescence
  • thermal oxidation
  • ultraviolet

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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  • Cite this

    Yang, Q., Zhou, X. H., Nukui, T., Saeki, Y., Izumi, S., Tackeuchi, A., Tatsuoka, H., & Liang, S. H. (2014). Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium. Science China Technological Sciences, 57(12), 2500-2503. https://doi.org/10.1007/s11431-014-5714-y