Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy

Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto

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We report room-temperature (RT) observation of near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence from h-BN heteroepitaxial layers. The h-BN layers were grown on single crystal Ni(111) substrates by flow-rate modulation epitaxy (FME), which is based on the alternate supply of triethylboron and ammonia. The h-BN layers grown with longer NH3 supply time exhibit stronger intensity and narrower full width of half maximum (FWHM) of the near-band-gap luminescence. X-ray diffraction measurements reveal that the FWHM of (0002) h-BN X-ray rocking curves decreases with increasing NH3 supply time. The reduction of lattice defects in h-BN grown by FME with longer NH3 supply time could be the reason for the improved near-band-gap ultraviolet luminescence at RT.

Original languageEnglish
Pages (from-to)1789-1792
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number6
Publication statusPublished - 2007 Jun 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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