Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

O. P. Agnihotri, Ravinder Pal, Keedong Yang, Soo Ho Bae, Sang Jun Lee, Min Young Lee, Woo Seok Choi, Jong Hwa Choi, Chul Hee, [No Value] Lee, Isamu Kato

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

Original languageEnglish
Pages (from-to)4500-4502
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul

Keywords

  • CdTe/n-HgCd Te
  • n-HgCdTe
  • Surface and interface modifications

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Ultraviolet photon induced bulk, surface and interface modifications in n-Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te in hydrogen environment'. Together they form a unique fingerprint.

Cite this