Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

O. P. Agnihotri; Ravinder Pal; Keedong Yang; Soo Ho Bae; Sang Jun Lee; Min Young Lee; Woo Seok Choi; Jong Hwa Choi; Chul Hee; [No Value] Lee; Isamu Kato

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te in hydrogen environment

O. P. Agnihotri^*, Ravinder Pal, Keedong Yang, Soo Ho Bae, Sang Jun Lee, Min Young Lee, Woo Seok Choi, Jong Hwa Choi, Chul Hee, [No Value] Lee, Isamu Kato

^*Corresponding author for this work

Waseda University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg_0.8Cd_0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg_0.8Cd_0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg_0.8Cd_0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

Original language	English
Pages (from-to)	4500-4502
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	7 A
Publication status	Published - 2002 Jul

Keywords

CdTe/n-HgCd Te
n-HgCdTe
Surface and interface modifications

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te in hydrogen environment. / Agnihotri, O. P.; Pal, Ravinder; Yang, Keedong et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 7 A, 07.2002, p. 4500-4502.

Research output: Contribution to journal › Article › peer-review

@article{fc0e218ef7324644b52a2397f972c813,

title = "Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment",

abstract = "Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.",

keywords = "CdTe/n-HgCd Te, n-HgCdTe, Surface and interface modifications",

author = "Agnihotri, {O. P.} and Ravinder Pal and Keedong Yang and Bae, {Soo Ho} and Lee, {Sang Jun} and Lee, {Min Young} and Choi, {Woo Seok} and Choi, {Jong Hwa} and Chul Hee and Lee, {[No Value]} and Isamu Kato",

year = "2002",

month = jul,

language = "English",

volume = "41",

pages = "4500--4502",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 A",

}

TY - JOUR

T1 - Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

AU - Agnihotri, O. P.

AU - Pal, Ravinder

AU - Yang, Keedong

AU - Bae, Soo Ho

AU - Lee, Sang Jun

AU - Lee, Min Young

AU - Choi, Woo Seok

AU - Choi, Jong Hwa

AU - Hee, Chul

AU - Lee, [No Value]

AU - Kato, Isamu

PY - 2002/7

Y1 - 2002/7

N2 - Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

AB - Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

KW - CdTe/n-HgCd Te

KW - n-HgCdTe

KW - Surface and interface modifications

UR - http://www.scopus.com/inward/record.url?scp=0036656342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036656342&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036656342

SN - 0021-4922

VL - 41

SP - 4500

EP - 4502

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 A

ER -

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te in hydrogen environment

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this