Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

O. P. Agnihotri, Ravinder Pal, Keedong Yang, Soo Ho Bae, Sang Jun Lee, Min Young Lee, Woo Seok Choi, Jong Hwa Choi, Chul Hee, [No Value] Lee, Isamu Kato

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Abstract

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

Original languageEnglish
Pages (from-to)4500-4502
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul

Keywords

  • CdTe/n-HgCd Te
  • n-HgCdTe
  • Surface and interface modifications

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Agnihotri, O. P., Pal, R., Yang, K., Bae, S. H., Lee, S. J., Lee, M. Y., Choi, W. S., Choi, J. H., Hee, C., Lee, N. V., & Kato, I. (2002). Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(7 A), 4500-4502.