Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

O. P. Agnihotri, Ravinder Pal, Keedong Yang, Soo Ho Bae, Sang Jun Lee, Min Young Lee, Woo Seok Choi, Jong Hwa Choi, Chul Hee, [No Value] Lee, Isamu Kato

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Abstract

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

Original languageEnglish
Pages (from-to)4500-4502
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul

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Keywords

  • CdTe/n-HgCd Te
  • n-HgCdTe
  • Surface and interface modifications

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Agnihotri, O. P., Pal, R., Yang, K., Bae, S. H., Lee, S. J., Lee, M. Y., Choi, W. S., Choi, J. H., Hee, C., Lee, N. V., & Kato, I. (2002). Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(7 A), 4500-4502.