Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass

Makoto Fujimaki, Shin ichiro Tokuhiro, Tetsuya Nakanishi, Ken ichi Nomura, Yoshimichi Ohki, Kazuo Imamura

Research output: Contribution to conferencePaper

Abstract

Paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO2 glass irradiated with UV photons from a KrF excimer laser were examined. The (Sn4+)- and the Sn E' centers were induced by the irradiation of KrF excimer laser photons. It was observed that the absorption of the (Sn4+)- is around 4.4 and 5.4 eV. Furthermore, it was found that the Sn-related oxygen deficient center has an absorption band around 4.83 eV.

Original languageEnglish
Pages665-668
Number of pages4
Publication statusPublished - 2001 Dec 1
Externally publishedYes
EventProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan
Duration: 2001 Nov 192001 Nov 22

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
CountryJapan
CityHimeji
Period01/11/1901/11/22

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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    Fujimaki, M., Tokuhiro, S. I., Nakanishi, T., Nomura, K. I., Ohki, Y., & Imamura, K. (2001). Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. 665-668. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.