Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass

Makoto Fujimaki, Shin ichiro Tokuhiro, Tetsuya Nakanishi, Ken ichi Nomura, Yoshimichi Ohki, Kazuo Imamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO2 glass irradiated with UV photons from a KrF excimer laser were examined. The (Sn4+)- and the Sn E' centers were induced by the irradiation of KrF excimer laser photons. It was observed that the absorption of the (Sn4+)- is around 4.4 and 5.4 eV. Furthermore, it was found that the Sn-related oxygen deficient center has an absorption band around 4.83 eV.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
Pages665-668
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
EventProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji
Duration: 2001 Nov 192001 Nov 22

Other

OtherProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
CityHimeji
Period01/11/1901/11/22

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Excimer lasers
Fused silica
Absorption spectra
Photons
Irradiation
Oxygen
Glass

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Fujimaki, M., Tokuhiro, S. I., Nakanishi, T., Nomura, K. I., Ohki, Y., & Imamura, K. (2001). Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. In Proceedings of the International Symposium on Electrical Insulating Materials (pp. 665-668)

Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. / Fujimaki, Makoto; Tokuhiro, Shin ichiro; Nakanishi, Tetsuya; Nomura, Ken ichi; Ohki, Yoshimichi; Imamura, Kazuo.

Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 665-668.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujimaki, M, Tokuhiro, SI, Nakanishi, T, Nomura, KI, Ohki, Y & Imamura, K 2001, Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. in Proceedings of the International Symposium on Electrical Insulating Materials. pp. 665-668, Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, 01/11/19.
Fujimaki M, Tokuhiro SI, Nakanishi T, Nomura KI, Ohki Y, Imamura K. Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. In Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 665-668
Fujimaki, Makoto ; Tokuhiro, Shin ichiro ; Nakanishi, Tetsuya ; Nomura, Ken ichi ; Ohki, Yoshimichi ; Imamura, Kazuo. / Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. Proceedings of the International Symposium on Electrical Insulating Materials. 2001. pp. 665-668
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