Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry

Mitsuteru Mimura, Nobuyuki Hasebe, Shingo Kobayashi, Mitsuhiro Miyajima, Tadayoshi Doke, Eido Shibamura

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Energy resolution measurements of ultraviolet-sensitive windowless silicon p-i-n photodiodes were carried out with alpha rays. A resolution of 12.6 keV in full width at half maximum for 5.486 MeV was achieved. The ultraviolet-sensitive silicon p- i-n photodiodes were found to be suitable to alpha-ray spectrometry.

    Original languageEnglish
    Pages (from-to)1740-1741
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume47
    Issue number3 PART 1
    DOIs
    Publication statusPublished - 2008 Mar 14

    Fingerprint

    Alpha particles
    Photodiodes
    Spectrometry
    photodiodes
    rays
    Silicon
    silicon
    Full width at half maximum
    spectroscopy
    energy

    Keywords

    • Alpha-ray spectrometry
    • Alpha-ray spectroscopy
    • PIN photodiode
    • UV-sensitive photodiode
    • Windowless photodiode

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Mimura, M., Hasebe, N., Kobayashi, S., Miyajima, M., Doke, T., & Shibamura, E. (2008). Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry. Japanese Journal of Applied Physics, 47(3 PART 1), 1740-1741. https://doi.org/10.1143/JJAP.47.1740

    Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry. / Mimura, Mitsuteru; Hasebe, Nobuyuki; Kobayashi, Shingo; Miyajima, Mitsuhiro; Doke, Tadayoshi; Shibamura, Eido.

    In: Japanese Journal of Applied Physics, Vol. 47, No. 3 PART 1, 14.03.2008, p. 1740-1741.

    Research output: Contribution to journalArticle

    Mimura, M, Hasebe, N, Kobayashi, S, Miyajima, M, Doke, T & Shibamura, E 2008, 'Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry', Japanese Journal of Applied Physics, vol. 47, no. 3 PART 1, pp. 1740-1741. https://doi.org/10.1143/JJAP.47.1740
    Mimura M, Hasebe N, Kobayashi S, Miyajima M, Doke T, Shibamura E. Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry. Japanese Journal of Applied Physics. 2008 Mar 14;47(3 PART 1):1740-1741. https://doi.org/10.1143/JJAP.47.1740
    Mimura, Mitsuteru ; Hasebe, Nobuyuki ; Kobayashi, Shingo ; Miyajima, Mitsuhiro ; Doke, Tadayoshi ; Shibamura, Eido. / Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 3 PART 1. pp. 1740-1741.
    @article{894e5d62064740a19be0cf390fb578d1,
    title = "Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry",
    abstract = "Energy resolution measurements of ultraviolet-sensitive windowless silicon p-i-n photodiodes were carried out with alpha rays. A resolution of 12.6 keV in full width at half maximum for 5.486 MeV was achieved. The ultraviolet-sensitive silicon p- i-n photodiodes were found to be suitable to alpha-ray spectrometry.",
    keywords = "Alpha-ray spectrometry, Alpha-ray spectroscopy, PIN photodiode, UV-sensitive photodiode, Windowless photodiode",
    author = "Mitsuteru Mimura and Nobuyuki Hasebe and Shingo Kobayashi and Mitsuhiro Miyajima and Tadayoshi Doke and Eido Shibamura",
    year = "2008",
    month = "3",
    day = "14",
    doi = "10.1143/JJAP.47.1740",
    language = "English",
    volume = "47",
    pages = "1740--1741",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "3 PART 1",

    }

    TY - JOUR

    T1 - Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry

    AU - Mimura, Mitsuteru

    AU - Hasebe, Nobuyuki

    AU - Kobayashi, Shingo

    AU - Miyajima, Mitsuhiro

    AU - Doke, Tadayoshi

    AU - Shibamura, Eido

    PY - 2008/3/14

    Y1 - 2008/3/14

    N2 - Energy resolution measurements of ultraviolet-sensitive windowless silicon p-i-n photodiodes were carried out with alpha rays. A resolution of 12.6 keV in full width at half maximum for 5.486 MeV was achieved. The ultraviolet-sensitive silicon p- i-n photodiodes were found to be suitable to alpha-ray spectrometry.

    AB - Energy resolution measurements of ultraviolet-sensitive windowless silicon p-i-n photodiodes were carried out with alpha rays. A resolution of 12.6 keV in full width at half maximum for 5.486 MeV was achieved. The ultraviolet-sensitive silicon p- i-n photodiodes were found to be suitable to alpha-ray spectrometry.

    KW - Alpha-ray spectrometry

    KW - Alpha-ray spectroscopy

    KW - PIN photodiode

    KW - UV-sensitive photodiode

    KW - Windowless photodiode

    UR - http://www.scopus.com/inward/record.url?scp=54249167652&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=54249167652&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.47.1740

    DO - 10.1143/JJAP.47.1740

    M3 - Article

    AN - SCOPUS:54249167652

    VL - 47

    SP - 1740

    EP - 1741

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 3 PART 1

    ER -