Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry

Mitsuteru Mimura, Nobuyuki Hasebe, Shingo Kobayashi, Mitsuhiro Miyajima, Tadayoshi Doke, Eido Shibamura

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Energy resolution measurements of ultraviolet-sensitive windowless silicon p-i-n photodiodes were carried out with alpha rays. A resolution of 12.6 keV in full width at half maximum for 5.486 MeV was achieved. The ultraviolet-sensitive silicon p- i-n photodiodes were found to be suitable to alpha-ray spectrometry.

    Original languageEnglish
    Pages (from-to)1740-1741
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume47
    Issue number3 PART 1
    DOIs
    Publication statusPublished - 2008 Mar 14

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    Keywords

    • Alpha-ray spectrometry
    • Alpha-ray spectroscopy
    • PIN photodiode
    • UV-sensitive photodiode
    • Windowless photodiode

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Mimura, M., Hasebe, N., Kobayashi, S., Miyajima, M., Doke, T., & Shibamura, E. (2008). Ultraviolet-sensitive windowless silicon PIN photodiodes for alpha-ray spectrometry. Japanese Journal of Applied Physics, 47(3 PART 1), 1740-1741. https://doi.org/10.1143/JJAP.47.1740