Understanding the stability of a sputtered Al buffer layer for single-walled carbon nanotube forest synthesis

Toshiyuki Ohashi, Ryogo Kato, Toshio Tokune, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    We have clarified the reason that aluminum (Al) buffer layers prepared by sputtering on catalytic substrates are stable for single-walled carbon nanotube forest synthesis on chemical vapor deposition. We have focused on the difference between thermal evaporation and sputtering as the method for the preparation of the buffer layers and have analyzed the Al layers using X-ray photoelectron spectroscopy and transmission electron microscopy. Al layers produced by sputtering strongly suggest the formation of γ-alumina by aluminum hydroxides while those from thermal evaporation contain metallic Al. As a result a drastic structural change occurs during thermal annealing, making the buffer layer unstable.

    Original languageEnglish
    Pages (from-to)401-409
    Number of pages9
    JournalCarbon
    Volume57
    DOIs
    Publication statusPublished - 2013 Jun

    Fingerprint

    Single-walled carbon nanotubes (SWCN)
    Buffer layers
    Aluminum
    Sputtering
    Thermal evaporation
    Aluminum Hydroxide
    Hydrated alumina
    Aluminum Oxide
    Chemical vapor deposition
    Alumina
    X ray photoelectron spectroscopy
    Annealing
    Transmission electron microscopy
    Substrates

    ASJC Scopus subject areas

    • Chemistry(all)

    Cite this

    Understanding the stability of a sputtered Al buffer layer for single-walled carbon nanotube forest synthesis. / Ohashi, Toshiyuki; Kato, Ryogo; Tokune, Toshio; Kawarada, Hiroshi.

    In: Carbon, Vol. 57, 06.2013, p. 401-409.

    Research output: Contribution to journalArticle

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    AB - We have clarified the reason that aluminum (Al) buffer layers prepared by sputtering on catalytic substrates are stable for single-walled carbon nanotube forest synthesis on chemical vapor deposition. We have focused on the difference between thermal evaporation and sputtering as the method for the preparation of the buffer layers and have analyzed the Al layers using X-ray photoelectron spectroscopy and transmission electron microscopy. Al layers produced by sputtering strongly suggest the formation of γ-alumina by aluminum hydroxides while those from thermal evaporation contain metallic Al. As a result a drastic structural change occurs during thermal annealing, making the buffer layer unstable.

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