Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography

Yuichiro Tanushi, Tomohiro Kita, Munehiro Toyama, Miyoshi Seki, Keiji Koshino, Nobuyuki Yokoyama, Minoru Ohtsuka, Akinobu Sugiyama, Eiichi Ishitsuka, Tsukuru Sano, Tsuyoshi Horikawa, Hirohito Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have investigated characteristics uniformity of Si-wire waveguide devices formed on 300 mm SOI wafers by using ArF immersion lithography process. Very low dispersion of group indices within wafers was confirmed from measurements of asymmetric Mach-Zhender interferometers.

Original languageEnglish
Title of host publication2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Pages105-106
Number of pages2
DOIs
Publication statusPublished - 2013 Dec 31
Externally publishedYes
Event2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 - Seoul, Korea, Republic of
Duration: 2013 Aug 282013 Aug 30

Other

Other2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
CountryKorea, Republic of
CitySeoul
Period13/8/2813/8/30

Fingerprint

Interferometers
Lithography
Mach number
Waveguides
Wire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Tanushi, Y., Kita, T., Toyama, M., Seki, M., Koshino, K., Yokoyama, N., ... Yamada, H. (2013). Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. In 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 (pp. 105-106). [6644448] https://doi.org/10.1109/Group4.2013.6644448

Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. / Tanushi, Yuichiro; Kita, Tomohiro; Toyama, Munehiro; Seki, Miyoshi; Koshino, Keiji; Yokoyama, Nobuyuki; Ohtsuka, Minoru; Sugiyama, Akinobu; Ishitsuka, Eiichi; Sano, Tsukuru; Horikawa, Tsuyoshi; Yamada, Hirohito.

2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. p. 105-106 6644448.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanushi, Y, Kita, T, Toyama, M, Seki, M, Koshino, K, Yokoyama, N, Ohtsuka, M, Sugiyama, A, Ishitsuka, E, Sano, T, Horikawa, T & Yamada, H 2013, Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. in 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013., 6644448, pp. 105-106, 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013, Seoul, Korea, Republic of, 13/8/28. https://doi.org/10.1109/Group4.2013.6644448
Tanushi Y, Kita T, Toyama M, Seki M, Koshino K, Yokoyama N et al. Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. In 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. p. 105-106. 6644448 https://doi.org/10.1109/Group4.2013.6644448
Tanushi, Yuichiro ; Kita, Tomohiro ; Toyama, Munehiro ; Seki, Miyoshi ; Koshino, Keiji ; Yokoyama, Nobuyuki ; Ohtsuka, Minoru ; Sugiyama, Akinobu ; Ishitsuka, Eiichi ; Sano, Tsukuru ; Horikawa, Tsuyoshi ; Yamada, Hirohito. / Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. pp. 105-106
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