TY - JOUR
T1 - Universal NBTI compact model replicating AC stress/recovery from a single-shot long-term DC measurement
AU - Hosaka, Takumi
AU - Nishizawa, Shinichi
AU - Kishida, Ryo
AU - Matsumoto, Takashi
AU - Kobayashi, Kazutoshi
N1 - Funding Information:
Acknowledgments This work has been partly supported by Renesas Electronics. This work is also partly supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc.
Publisher Copyright:
© 2020 Information Processing Society of Japan. All rights reserved.
PY - 2020
Y1 - 2020
N2 - In this paper, a simple and compact Negative Bias Temperature Instability (NBTI) model is proposed. It is based on the reaction-diffusion (tn) and hole-trapping (log(t)) theories. A single shot of DC stress and recovery data is utilized to express duty cycle dependence of NBTI degradation and recovery. Parameter fitting is proceeded by considering that the amount of recovery cannot be larger than stress degradation. The proposed universal model is applied to two types of transistors in different fabrication process technologies, and evaluate its feasibility to show the universality of our proposed model. It replicates stress and recovery successfully with various duty cycles.
AB - In this paper, a simple and compact Negative Bias Temperature Instability (NBTI) model is proposed. It is based on the reaction-diffusion (tn) and hole-trapping (log(t)) theories. A single shot of DC stress and recovery data is utilized to express duty cycle dependence of NBTI degradation and recovery. Parameter fitting is proceeded by considering that the amount of recovery cannot be larger than stress degradation. The proposed universal model is applied to two types of transistors in different fabrication process technologies, and evaluate its feasibility to show the universality of our proposed model. It replicates stress and recovery successfully with various duty cycles.
KW - AC stress dependency
KW - Hole trapping
KW - Negative bias temperature instability (NBTI)
KW - Reaction diffusion
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U2 - 10.2197/ipsjtsldm.13.56
DO - 10.2197/ipsjtsldm.13.56
M3 - Article
AN - SCOPUS:85090928749
SN - 1882-6687
VL - 13
SP - 56
EP - 64
JO - IPSJ Transactions on System LSI Design Methodology
JF - IPSJ Transactions on System LSI Design Methodology
ER -