Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition

S. Takayanagi, Takahiko Yanagitani, M. Matsukawa

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A polycrystalline film usually grows in its most densely packed plane parallel to the substrate plane. We demonstrated that the unusual crystalline growth can occur by using energetic negative ions generated in the magnetron capacitively coupled plasma deposition without using separated ion source. Negative ion energy and flux entering the substrate were quantitatively measured and compared with the preferential crystalline growth of unusual (112̄0) orientation in ZnO films. Strong (112̄0) orientation was found at the cathode erosion area where large amount of high energy negative ion of 170-250 eV was observed in low gas pressure of 0.1 Pa.

Original languageEnglish
Article number232902
JournalApplied Physics Letters
Volume101
Issue number23
DOIs
Publication statusPublished - 2012 Dec 3
Externally publishedYes

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negative ions
oxide films
bombardment
ion sources
gas pressure
erosion
low pressure
cathodes
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition. / Takayanagi, S.; Yanagitani, Takahiko; Matsukawa, M.

In: Applied Physics Letters, Vol. 101, No. 23, 232902, 03.12.2012.

Research output: Contribution to journalArticle

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