Unusually abrupt switching in submicrometer thin-film transistors using a polysilicon film with enhanced grain size

Noriyoshi Yamauchi, J. J J Hajjar, Rafael Reif

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Unusually abrupt drain current change observed in polysilicon thin-film transistors (TFTs) with a channel length and width of 1 μm or smaller is discussed. The polysilicon used to fabricate the devices was deposited by low-pressure chemical vapor deposition (LPCVD) and the grain size of the film was enhanced by silicon ion implantation followed by a low-temperature anneal. The TFTs exhibited an abrupt drain current change of more than five orders of magnitude for a corresponding gate voltage change of less than 40 mV. A self-limiting positive feedback loop due to impact ionization currents and/or a parasitic bipolar effect are suggested as possible explanations.

Original languageEnglish
Pages (from-to)15-17
Number of pages3
JournalElectron device letters
Volume11
Issue number1
Publication statusPublished - 1990 Jan
Externally publishedYes

Fingerprint

Drain current
Thin film transistors
Polysilicon
Low pressure chemical vapor deposition
Impact ionization
Silicon
Ion implantation
Feedback
Electric potential
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Unusually abrupt switching in submicrometer thin-film transistors using a polysilicon film with enhanced grain size. / Yamauchi, Noriyoshi; Hajjar, J. J J; Reif, Rafael.

In: Electron device letters, Vol. 11, No. 1, 01.1990, p. 15-17.

Research output: Contribution to journalArticle

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