Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction

Ziqian Wang; Shoucong Ning; Takeshi Fujita; Akihiko Hirata; Mingwei Chen

doi:10.1021/acsnano.6b05958

Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS₂ Monolayers by Electron Diffraction

Ziqian Wang, Shoucong Ning, Takeshi Fujita, Akihiko Hirata, Mingwei Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS₂ monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.

Original language	English
Pages (from-to)	10308-10316
Number of pages	9
Journal	ACS Nano
Volume	10
Issue number	11
DOIs	https://doi.org/10.1021/acsnano.6b05958
Publication status	Published - 2016 Nov 22
Externally published	Yes

Keywords

MoS
electron diffraction
phase interface
transition metal dichalcogenide
two-dimensional materials

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/acsnano.6b05958

Cite this

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title = "Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction",

abstract = "The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.",

keywords = "MoS, electron diffraction, phase interface, transition metal dichalcogenide, two-dimensional materials",

author = "Ziqian Wang and Shoucong Ning and Takeshi Fujita and Akihiko Hirata and Mingwei Chen",

note = "Funding Information: This work is sponsored by JST-CREST Phase Interface Science for Highly Efficient Energy Utilization, JST, Japan; World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials, MEXT, Japan, and partially supported by Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Scientific Research on Innovative Areas Science of Atomic Layers (Grant No. 26107504). S.N. is grateful for the financial support by the General Research Fund (Project No. 622813) from the Hong Kong Research Grants Council. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

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doi = "10.1021/acsnano.6b05958",

language = "English",

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journal = "ACS Nano",

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T1 - Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction

AU - Wang, Ziqian

AU - Ning, Shoucong

AU - Fujita, Takeshi

AU - Hirata, Akihiko

AU - Chen, Mingwei

N1 - Funding Information: This work is sponsored by JST-CREST Phase Interface Science for Highly Efficient Energy Utilization, JST, Japan; World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials, MEXT, Japan, and partially supported by Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Scientific Research on Innovative Areas Science of Atomic Layers (Grant No. 26107504). S.N. is grateful for the financial support by the General Research Fund (Project No. 622813) from the Hong Kong Research Grants Council. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/11/22

Y1 - 2016/11/22

N2 - The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.

AB - The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.

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