Abstract
The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.
| Original language | English |
|---|---|
| Pages (from-to) | 10308-10316 |
| Number of pages | 9 |
| Journal | ACS Nano |
| Volume | 10 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2016 Nov 22 |
| Externally published | Yes |
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Keywords
- electron diffraction
- MoS
- phase interface
- transition metal dichalcogenide
- two-dimensional materials
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction. / Wang, Ziqian; Ning, Shoucong; Fujita, Takeshi; Hirata, Akihiko; Chen, Mingwei.
In: ACS Nano, Vol. 10, No. 11, 22.11.2016, p. 10308-10316.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction
AU - Wang, Ziqian
AU - Ning, Shoucong
AU - Fujita, Takeshi
AU - Hirata, Akihiko
AU - Chen, Mingwei
PY - 2016/11/22
Y1 - 2016/11/22
N2 - The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.
AB - The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.
KW - electron diffraction
KW - MoS
KW - phase interface
KW - transition metal dichalcogenide
KW - two-dimensional materials
UR - http://www.scopus.com/inward/record.url?scp=84997521684&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84997521684&partnerID=8YFLogxK
U2 - 10.1021/acsnano.6b05958
DO - 10.1021/acsnano.6b05958
M3 - Article
AN - SCOPUS:84997521684
VL - 10
SP - 10308
EP - 10316
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 11
ER -