Abstract
Lowerature AuAu bonding was achieved under vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3). The Au surfaces obtained after the VUV/O3 treatment were analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. The results indicate that the amount of carbon-based contaminants was dramatically decreased and that there was no serious damage to Au surfaces caused by the VUV/O3 treatment. The AuAu bonding temperature was successfully reduced to 150°C after the VUV/ O3 treatment. The average shear strength was approximately 56 MPa, and cross-sectional scanning electron microscopy (SEM) images of the bonded samples confirmed the absence of voids and cracks. Therefore, VUV/O3 treatment is highly effective for achieving lowerature AuAu bonding.
Original language | English |
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Pages (from-to) | 2139-2143 |
Number of pages | 5 |
Journal | Materials Transactions |
Volume | 54 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Bonding
- Flip chip
- Gold
- Micro-bump
- Three-dimensional integration
- Vacuum ultraviolet
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering