Vacuum ultraviolet (VUV) and vapor-combined surface modification for hybrid bonding of SiC, GaN, and Si substrates at low temperature and atmospheric pressure

Akitsu Shigetou, Jun Mizuno, Shuichi Shoji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Homo- and heterogeneous bonding of SiC (Si-related semiconductors), and GaN was found feasible at the temperatures lower than 200 °C and atmospheric pressure, utilizing a single vacuum ultraviolet (VUV) and vapor - combined surface modification method. Hybrid bonding of these materials will be of practical use in obtaining high reliability and performance in thin power devices. The water vapor, which was included in VUV irradiation atmosphere (N<inf>2</inf>) at the tuned amount of exposure ((g/m<sup>3</sup>)·s), helped generate hydrogen and hydroxyl radicals, then resulted in the elimination of surface contaminant, partial deoxidization of native oxide, and the formation of hydrate bridging layers at the same time. According to the change in the generation ratio of bridging layers, the exposure of around 4 × 10<sup>3</sup> (g/m<sup>3</sup>)·s was chosen as an optimum parameter. Upon heating at 150 - 200 °C, the hydrogen bonds, which were followed by the dehydration inside the bridging layers, formed tight adhesion between the surfaces. Although the bond area was limited due to the partial contact at the touchdown, the interface did not contain readily visible voids.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1498-1501
Number of pages4
Volume2015-July
ISBN (Print)9781479986095
DOIs
Publication statusPublished - 2015 Jul 15
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 2015 May 262015 May 29

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period15/5/2615/5/29

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shigetou, A., Mizuno, J., & Shoji, S. (2015). Vacuum ultraviolet (VUV) and vapor-combined surface modification for hybrid bonding of SiC, GaN, and Si substrates at low temperature and atmospheric pressure. In Proceedings - Electronic Components and Technology Conference (Vol. 2015-July, pp. 1498-1501). [7159796] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159796