Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Toshiki Makimoto, Kazuhide Kumakura, Toshio Nishida, Naoki Kobayashi

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

Original languageEnglish
Pages (from-to)313-315
Number of pages3
JournalJournal of Electronic Materials
Volume31
Issue number4
DOIs
Publication statusPublished - 2002 Apr

Keywords

  • Band offset
  • Capacitance-voltage characteristics
  • GaN
  • Heterojunction diode
  • InGaN
  • P-InGaN
  • Valence-band discontinuity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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