Valence Band Modification of a (GaxIn1-x)2O3Solid Solution System Fabricated by Combinatorial Synthesis

Takahiro Nagata*, Takeshi Hoga, Akihiro Yamashita, Toru Asahi, Shinjiro Yagyu, Toyohiro Chikyow

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The correlation between the crystal structure and valence band structure of a (GaxIn1-x)2O3 solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (GaxIn1-x)2O3 with a single-phase cubic In2O3 crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in In2O3, was confirmed. When the Ga content increased to approximately x = 0.4, mixed crystal structures of Ga2O3 and In2O3 were produced. Above x = 0.5, the dominant valence band structure was attributed to Ga2O3, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (GaxIn1-x)2O3 solid solution system were strongly affected by Ga2O3; however, the valence band maximum position shifted to a higher binding energy.

Original languageEnglish
Pages (from-to)433-439
Number of pages7
JournalACS Combinatorial Science
Volume22
Issue number9
DOIs
Publication statusPublished - 2020 Sep 14

Keywords

  • X-ray photoelectron spectroscopy
  • combinatorial pulsed laser deposition method
  • surface electron accumulation layer
  • wide band gap oxide semiconductor

ASJC Scopus subject areas

  • Chemistry(all)

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