Valence-band parameters and hole mobility of Ge-Si alloys-theory

Kyozaburo Takeda, A. Taguchi, M. Sakata

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.

Original languageEnglish
Article number013
Pages (from-to)2237-2249
Number of pages13
JournalJournal of Physics C: Solid State Physics
Volume16
Issue number12
DOIs
Publication statusPublished - 1983
Externally publishedYes

Fingerprint

Hole mobility
hole mobility
Valence bands
Scattering
valence
scattering
Phonons
Band structure
Impurities
phonons
impurities
temperature dependence
Si-Ge alloys
Temperature
interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Valence-band parameters and hole mobility of Ge-Si alloys-theory. / Takeda, Kyozaburo; Taguchi, A.; Sakata, M.

In: Journal of Physics C: Solid State Physics, Vol. 16, No. 12, 013, 1983, p. 2237-2249.

Research output: Contribution to journalArticle

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