Abstract
Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.
| Original language | English |
|---|---|
| Article number | 013 |
| Pages (from-to) | 2237-2249 |
| Number of pages | 13 |
| Journal | Journal of Physics C: Solid State Physics |
| Volume | 16 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1983 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Valence-band parameters and hole mobility of Ge-Si alloys-theory. / Takeda, Kyozaburo; Taguchi, A.; Sakata, M.
In: Journal of Physics C: Solid State Physics, Vol. 16, No. 12, 013, 1983, p. 2237-2249.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Valence-band parameters and hole mobility of Ge-Si alloys-theory
AU - Takeda, Kyozaburo
AU - Taguchi, A.
AU - Sakata, M.
PY - 1983
Y1 - 1983
N2 - Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.
AB - Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.
UR - http://www.scopus.com/inward/record.url?scp=0043060940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0043060940&partnerID=8YFLogxK
U2 - 10.1088/0022-3719/16/12/013
DO - 10.1088/0022-3719/16/12/013
M3 - Article
AN - SCOPUS:0043060940
VL - 16
SP - 2237
EP - 2249
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 12
M1 - 013
ER -