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Valence-band parameters and hole mobility of Ge-Si alloys-theory
K. Takeda
*
, A. Taguchi, M. Sakata
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
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peer-review
51
Citations (Scopus)
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Engineering & Materials Science
Si-Ge alloys
100%
Valence bands
98%
Hole mobility
90%
Phonons
57%
Scattering
51%
Band structure
25%
Impurities
17%
Relaxation
16%
Temperature
7%
Chemical Compounds
Hole Mobility
64%
Valence Band
60%
Optical Phonon
43%
Alloy
38%
Phonon
30%
Electronic Band Structure
27%
Time
9%
Physics & Astronomy
hole mobility
62%
valence
39%
scattering
21%
phonons
18%
impurities
9%
temperature dependence
8%
interactions
5%