Vapor growth of thin heteroepitaxial InP films on CdS

Masahide Inuishi, Bruce W. Wessels

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.

Original languageEnglish
Pages (from-to)195-202
Number of pages8
JournalThin Solid Films
Volume88
Issue number3
DOIs
Publication statusPublished - 1982 Feb 19
Externally publishedYes

Fingerprint

phosphine
Vapors
vapors
Indium
Substrates
phosphines
indium
Chemical vapor deposition
Solid solutions
Microscopic examination
solid solutions
Single crystals
vapor deposition
Crystalline materials
microscopy
Scanning
scanning
single crystals
Temperature
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Vapor growth of thin heteroepitaxial InP films on CdS. / Inuishi, Masahide; Wessels, Bruce W.

In: Thin Solid Films, Vol. 88, No. 3, 19.02.1982, p. 195-202.

Research output: Contribution to journalArticle

Inuishi, Masahide ; Wessels, Bruce W. / Vapor growth of thin heteroepitaxial InP films on CdS. In: Thin Solid Films. 1982 ; Vol. 88, No. 3. pp. 195-202.
@article{a3dbbf9dde4e4ae7a6b330fe85c6b1b6,
title = "Vapor growth of thin heteroepitaxial InP films on CdS",
abstract = "InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.",
author = "Masahide Inuishi and Wessels, {Bruce W.}",
year = "1982",
month = "2",
day = "19",
doi = "10.1016/0040-6090(82)90047-5",
language = "English",
volume = "88",
pages = "195--202",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Vapor growth of thin heteroepitaxial InP films on CdS

AU - Inuishi, Masahide

AU - Wessels, Bruce W.

PY - 1982/2/19

Y1 - 1982/2/19

N2 - InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.

AB - InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0020096589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020096589&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(82)90047-5

DO - 10.1016/0040-6090(82)90047-5

M3 - Article

VL - 88

SP - 195

EP - 202

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 3

ER -