Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia

M. Yuri, T. Ueda, H. Lee, K. Itoh, Takaaki Baba, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

GaN films with good crystalline quality are grown on sapphire by atmospheric pressure vapor phase epitaxy using gallium tri-chloride (GaCl 3) and ammonia (NH 3). Epitaxial growth is carried out over temperature and V/III-ratio ranges of 800-1000°C and 100-1000, respectively. Typical growth rate obtained is in the range of 5-20 μm/hr. The films grown below 925°C typically show three dimensional (island) growth, while above that temperature, continuous films are obtained. Films grown at 975°C with a V/III ratio > 300 exhibit a smooth surface. XRD analysis shows that the films are single crystal with hexagonal polytype. Strong band-edge photoluminescence is observed with a FWHM of 60 meV at room temperature and 25 meV at 77K. The results indicate that this simple growth technique is effective for growing high quality bulk GaN, which can be used as a substrate for subsequent epitaxy. In order to further improve the surface morphology, a preliminary experiment on GaN growth on a thin GaN buffer layer prepared by gas source MBE is also presented.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, S.J. Pearton, F. Ren, C.S. Wu
PublisherMaterials Research Society
Pages195-200
Number of pages6
Volume421
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Other

OtherProceedings of the 1996 MRS Spring Meeting
CitySan Francisco, CA, USA
Period96/4/896/4/12

Fingerprint

Gallium
Vapor phase epitaxy
Ammonia
Chlorides
Epitaxial growth
Aluminum Oxide
Buffer layers
Full width at half maximum
Molecular beam epitaxy
Sapphire
Temperature
Atmospheric pressure
Surface morphology
Photoluminescence
Gases
Single crystals
Crystalline materials
Substrates
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yuri, M., Ueda, T., Lee, H., Itoh, K., Baba, T., & Harris, J. S. (1996). Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia. In R. J. Shul, S. J. Pearton, F. Ren, & C. S. Wu (Eds.), Materials Research Society Symposium - Proceedings (Vol. 421, pp. 195-200). Materials Research Society.

Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia. / Yuri, M.; Ueda, T.; Lee, H.; Itoh, K.; Baba, Takaaki; Harris, J. S.

Materials Research Society Symposium - Proceedings. ed. / R.J. Shul; S.J. Pearton; F. Ren; C.S. Wu. Vol. 421 Materials Research Society, 1996. p. 195-200.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yuri, M, Ueda, T, Lee, H, Itoh, K, Baba, T & Harris, JS 1996, Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia. in RJ Shul, SJ Pearton, F Ren & CS Wu (eds), Materials Research Society Symposium - Proceedings. vol. 421, Materials Research Society, pp. 195-200, Proceedings of the 1996 MRS Spring Meeting, San Francisco, CA, USA, 96/4/8.
Yuri M, Ueda T, Lee H, Itoh K, Baba T, Harris JS. Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia. In Shul RJ, Pearton SJ, Ren F, Wu CS, editors, Materials Research Society Symposium - Proceedings. Vol. 421. Materials Research Society. 1996. p. 195-200
Yuri, M. ; Ueda, T. ; Lee, H. ; Itoh, K. ; Baba, Takaaki ; Harris, J. S. / Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia. Materials Research Society Symposium - Proceedings. editor / R.J. Shul ; S.J. Pearton ; F. Ren ; C.S. Wu. Vol. 421 Materials Research Society, 1996. pp. 195-200
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