Variation of optical properties by the crystalline phase transition of polycrystalline silicon

Hidenori Iwata, Tomohiro Kita, Hirohito Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.

Original languageEnglish
Title of host publicationSilicon Photonics VI
DOIs
Publication statusPublished - 2011 Apr 11
Externally publishedYes
EventSilicon Photonics VI - San Francisco, CA, United States
Duration: 2011 Jan 232011 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7943
ISSN (Print)0277-786X

Other

OtherSilicon Photonics VI
CountryUnited States
CitySan Francisco, CA
Period11/1/2311/1/26

Keywords

  • Amorphous silicon
  • Laser annealing
  • Polycrystalline silicon
  • Silicon photonic-wire waveguide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Iwata, H., Kita, T., & Yamada, H. (2011). Variation of optical properties by the crystalline phase transition of polycrystalline silicon. In Silicon Photonics VI [79431F] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7943). https://doi.org/10.1117/12.874435