Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing

Masafumi Inaba, Akinori Seki, Kazuaki Sato, Tomoyoshi Kushida, Taisuke Kageura, Hayate Yamano, Atsushi Hiraiwa, Hiroshi Kawarada

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    Abstract

    A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high-dose ion implantation and high-temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773K (500°C), followed by HTA at 1973K (1700°C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in-plane direction, which was confirmed via multiple cross-sectional transmission electron microscopy images obtained from different directions rotated 2, 5, 10, and 15° around the [001] axis. The Raman and photoluminescence exhibited no significant peaks. The initial sp2 structure state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using stopping-and-range-of-ions-in-matter calculations and Rutherford backscattering/channeling (RBS-C) measurements. The RBS-C spectra indicate that the crystal is maintained after hot implantation and is recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.

    Original languageEnglish
    JournalPhysica Status Solidi (B) Basic Research
    DOIs
    Publication statusAccepted/In press - 2017

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    Keywords

    • Annealing
    • Carbon
    • Diamond
    • Graphite
    • Ion implantation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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