Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen, K. Utaka, Y. H. Zhuang, Y. Y. Liu, A. Yariv

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

Original languageEnglish
Pages (from-to)874-876
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number14
DOIs
Publication statusPublished - 1987 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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