VERTICAL MONOLITHIC COMBINATION OF AN InGaAsP/InP LASER AND A HETEROJUNCTION BIPOLAR TRANSISTOR.

T. R. Chen, Katsuyuki Utaka, Katsuyuki Utaka, Ya Yun Liu, Amnon Yariv

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A distributed (DH)InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Optical bistability and optical switching controlled by the base injection current were demonstrated.

Original languageEnglish
Pages (from-to)919-924
Number of pages6
JournalIEEE Journal of Quantum Electronics
VolumeQE-23
Issue number6
Publication statusPublished - 1987 Jun
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Lasers
lasers
optical bistability
mesas
optical switching
Optical bistability
laser outputs
threshold currents
injection
Mass transfer
configurations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

VERTICAL MONOLITHIC COMBINATION OF AN InGaAsP/InP LASER AND A HETEROJUNCTION BIPOLAR TRANSISTOR. / Chen, T. R.; Utaka, Katsuyuki; Utaka, Katsuyuki; Liu, Ya Yun; Yariv, Amnon.

In: IEEE Journal of Quantum Electronics, Vol. QE-23, No. 6, 06.1987, p. 919-924.

Research output: Contribution to journalArticle

Chen, T. R. ; Utaka, Katsuyuki ; Utaka, Katsuyuki ; Liu, Ya Yun ; Yariv, Amnon. / VERTICAL MONOLITHIC COMBINATION OF AN InGaAsP/InP LASER AND A HETEROJUNCTION BIPOLAR TRANSISTOR. In: IEEE Journal of Quantum Electronics. 1987 ; Vol. QE-23, No. 6. pp. 919-924.
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