A distributed (DH)InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Optical bistability and optical switching controlled by the base injection current were demonstrated.
|Number of pages||6|
|Journal||IEEE Journal of Quantum Electronics|
|Publication status||Published - 1987 Jun|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)