Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Nobutaka Oi, Masafumi Inaba, Satoshi Okubo, Ikuto Tsuyuzaki, Taisuke Kageura, Shinobu Onoda, Atsushi Hiraiwa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with trench structures and drain current densities equivalent to those of n-channel wide bandgap devices for complementary inverters. We use two-dimensional hole gases induced by atomic layer deposited Al2O3 for the channel and drift layers, irrespective of their crystal orientations. The source and gate are on the planar surface, the drift layer is mainly on the sidewall and the drain is the p+ substrate. The maximum drain current density exceeds 200 mA mm-1 at a 12 μm source-drain distance. On/off ratios of over eight orders of magnitude are demonstrated and the drain current reaches the lower measurement limit in the off-state at room temperature using a nitrogen-doped n-type blocking layer formed using ion implantation and epitaxial growth.

    Original languageEnglish
    Article number10660
    JournalScientific Reports
    Volume8
    Issue number1
    DOIs
    Publication statusPublished - 2018 Dec 1

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    metal oxide semiconductors
    field effect transistors
    diamonds
    gases
    current density
    inverters
    semiconductor devices
    electrical faults
    ion implantation
    nitrogen
    requirements
    electrical resistivity
    room temperature
    crystals

    ASJC Scopus subject areas

    • General

    Cite this

    Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors. / Oi, Nobutaka; Inaba, Masafumi; Okubo, Satoshi; Tsuyuzaki, Ikuto; Kageura, Taisuke; Onoda, Shinobu; Hiraiwa, Atsushi; Kawarada, Hiroshi.

    In: Scientific Reports, Vol. 8, No. 1, 10660, 01.12.2018.

    Research output: Contribution to journalArticle

    Oi, Nobutaka ; Inaba, Masafumi ; Okubo, Satoshi ; Tsuyuzaki, Ikuto ; Kageura, Taisuke ; Onoda, Shinobu ; Hiraiwa, Atsushi ; Kawarada, Hiroshi. / Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors. In: Scientific Reports. 2018 ; Vol. 8, No. 1.
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    AU - Inaba, Masafumi

    AU - Okubo, Satoshi

    AU - Tsuyuzaki, Ikuto

    AU - Kageura, Taisuke

    AU - Onoda, Shinobu

    AU - Hiraiwa, Atsushi

    AU - Kawarada, Hiroshi

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