Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation

T. Iwasaki, S. Mejima, T. Koide, R. Morikane, H. Nakayama, T. Shinada, I. Ohdomari, Hiroshi Kawarada

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    Abstract

    Vertically aligned carbon nanotubes (CNTs) were synthesized from Ni nanoparticles prepared by ion implantation. Ni ions were implanted at 30 keV into thermally grown SiO2 substrates using a focused-ion-beam. High-density nanoparticle formation was investigated with high doses up to 5.0 × 1017 ions/cm2. Dense Ni nanoparticles in the order of 1011-1012 cm- 2 were obtained on a SiO2 substrate, and the particle density and diameter were controlled by post-implantation annealing. Particles annealed at 700 °C led to vertically aligned CNTs. Interestingly, catalysts were longer along the vertical axis and the lower half of the Ni particle was buried in SiO2.

    Original languageEnglish
    Pages (from-to)1443-1446
    Number of pages4
    JournalDiamond and Related Materials
    Volume17
    Issue number7-10
    DOIs
    Publication statusPublished - 2008 Jul

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    Keywords

    • Carbon nanotube
    • Ion implantation
    • Nanoparticle
    • Vertically aligned

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Iwasaki, T., Mejima, S., Koide, T., Morikane, R., Nakayama, H., Shinada, T., Ohdomari, I., & Kawarada, H. (2008). Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation. Diamond and Related Materials, 17(7-10), 1443-1446. https://doi.org/10.1016/j.diamond.2008.02.006