Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada, H. Nobuhara, H. Hamaguchi, T. Mikawa, Atsushi Tackeuchi, T. Fujii

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

Original languageEnglish
Pages (from-to)16-17
Number of pages2
JournalApplied Physics Letters
Volume54
Issue number1
Publication statusPublished - 1989
Externally publishedYes

Fingerprint

photodiodes
high speed
metals
dark current
electro-optics
quantum efficiency
capacitance
sampling
electric potential
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice. / Wada, O.; Nobuhara, H.; Hamaguchi, H.; Mikawa, T.; Tackeuchi, Atsushi; Fujii, T.

In: Applied Physics Letters, Vol. 54, No. 1, 1989, p. 16-17.

Research output: Contribution to journalArticle

Wada, O. ; Nobuhara, H. ; Hamaguchi, H. ; Mikawa, T. ; Tackeuchi, Atsushi ; Fujii, T. / Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice. In: Applied Physics Letters. 1989 ; Vol. 54, No. 1. pp. 16-17.
@article{22df089180c843ae8b337a2ed0b7169a,
title = "Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice",
abstract = "A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80{\%} at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.",
author = "O. Wada and H. Nobuhara and H. Hamaguchi and T. Mikawa and Atsushi Tackeuchi and T. Fujii",
year = "1989",
language = "English",
volume = "54",
pages = "16--17",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

AU - Wada, O.

AU - Nobuhara, H.

AU - Hamaguchi, H.

AU - Mikawa, T.

AU - Tackeuchi, Atsushi

AU - Fujii, T.

PY - 1989

Y1 - 1989

N2 - A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

AB - A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

UR - http://www.scopus.com/inward/record.url?scp=0141963464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141963464&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0141963464

VL - 54

SP - 16

EP - 17

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -