Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada, H. Nobuhara, H. Hamaguchi, T. Mikawa, A. Tackeuchi, T. Fujii

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)

Abstract

A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

Original languageEnglish
Pages (from-to)16-17
Number of pages2
JournalApplied Physics Letters
Volume54
Issue number1
DOIs
Publication statusPublished - 1989 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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