Very high yield growth of vertically aligned single-walled carbon nanotubes by point-arc microwave plasma CVD

Guofang Zhong, Takayuki Iwasaki, Kotaro Honda, Yukio Furukawa, Iwao Ohdomari, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    80 Citations (Scopus)

    Abstract

    A very high yield growth of extremely dense and vertically aligned single-walled carbon nanotubes (SWNT) by Point-Arc Microwave plasma CVD were analyzed. It was observed that SWNT film thickness increases continuously with the growth time, suggesting an almost unlimited life time for the catalyst. Thin top Al2O3 coating plays a very important role in the aligned growth of extremely dense SWNTs. The point-arc MPCVD method is preferable for controlled growth of SWNTs at a low temperature on Si substrates coated with a sandwich-like coating structure.

    Original languageEnglish
    Pages (from-to)127-130
    Number of pages4
    JournalChemical Vapor Deposition
    Volume11
    Issue number3
    DOIs
    Publication statusPublished - 2005 Mar

    Fingerprint

    Plasma CVD
    Single-walled carbon nanotubes (SWCN)
    arcs
    carbon nanotubes
    Microwaves
    vapor deposition
    microwaves
    coatings
    Coatings
    Film thickness
    film thickness
    catalysts
    life (durability)
    Catalysts
    Substrates
    Temperature

    ASJC Scopus subject areas

    • Electrochemistry
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Very high yield growth of vertically aligned single-walled carbon nanotubes by point-arc microwave plasma CVD. / Zhong, Guofang; Iwasaki, Takayuki; Honda, Kotaro; Furukawa, Yukio; Ohdomari, Iwao; Kawarada, Hiroshi.

    In: Chemical Vapor Deposition, Vol. 11, No. 3, 03.2005, p. 127-130.

    Research output: Contribution to journalArticle

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    AU - Ohdomari, Iwao

    AU - Kawarada, Hiroshi

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