Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Masafumi Inaba, Kazuma Suzuki, Megumi Shibuya, Chih Yu Lee, Yoshiho Masuda, Naoya Tomatsu, Wataru Norimatsu, Atsushi Hiraiwa, Michiko Kusunoki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 1018cm-3 was estimated to be ∼1.3 × 10-4 Ω cm2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

    Original languageEnglish
    Article number123501
    JournalApplied Physics Letters
    Volume106
    Issue number12
    DOIs
    Publication statusPublished - 2015 Mar 23

    Fingerprint

    silicon carbides
    carbides
    carbon nanotubes
    electric contacts
    electrical resistivity
    durability
    high current
    transistors
    decomposition
    heat
    electronics

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Very low Schottky barrier height at carbon nanotube and silicon carbide interface. / Inaba, Masafumi; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih Yu; Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Hiraiwa, Atsushi; Kusunoki, Michiko; Kawarada, Hiroshi.

    In: Applied Physics Letters, Vol. 106, No. 12, 123501, 23.03.2015.

    Research output: Contribution to journalArticle

    Inaba, M, Suzuki, K, Shibuya, M, Lee, CY, Masuda, Y, Tomatsu, N, Norimatsu, W, Hiraiwa, A, Kusunoki, M & Kawarada, H 2015, 'Very low Schottky barrier height at carbon nanotube and silicon carbide interface', Applied Physics Letters, vol. 106, no. 12, 123501. https://doi.org/10.1063/1.4916248
    Inaba M, Suzuki K, Shibuya M, Lee CY, Masuda Y, Tomatsu N et al. Very low Schottky barrier height at carbon nanotube and silicon carbide interface. Applied Physics Letters. 2015 Mar 23;106(12). 123501. https://doi.org/10.1063/1.4916248
    Inaba, Masafumi ; Suzuki, Kazuma ; Shibuya, Megumi ; Lee, Chih Yu ; Masuda, Yoshiho ; Tomatsu, Naoya ; Norimatsu, Wataru ; Hiraiwa, Atsushi ; Kusunoki, Michiko ; Kawarada, Hiroshi. / Very low Schottky barrier height at carbon nanotube and silicon carbide interface. In: Applied Physics Letters. 2015 ; Vol. 106, No. 12.
    @article{2f82a73f6f98471ab4b419e5da42dd2f,
    title = "Very low Schottky barrier height at carbon nanotube and silicon carbide interface",
    abstract = "Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 1018cm-3 was estimated to be ∼1.3 × 10-4 Ω cm2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.",
    author = "Masafumi Inaba and Kazuma Suzuki and Megumi Shibuya and Lee, {Chih Yu} and Yoshiho Masuda and Naoya Tomatsu and Wataru Norimatsu and Atsushi Hiraiwa and Michiko Kusunoki and Hiroshi Kawarada",
    year = "2015",
    month = "3",
    day = "23",
    doi = "10.1063/1.4916248",
    language = "English",
    volume = "106",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "12",

    }

    TY - JOUR

    T1 - Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    AU - Inaba, Masafumi

    AU - Suzuki, Kazuma

    AU - Shibuya, Megumi

    AU - Lee, Chih Yu

    AU - Masuda, Yoshiho

    AU - Tomatsu, Naoya

    AU - Norimatsu, Wataru

    AU - Hiraiwa, Atsushi

    AU - Kusunoki, Michiko

    AU - Kawarada, Hiroshi

    PY - 2015/3/23

    Y1 - 2015/3/23

    N2 - Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 1018cm-3 was estimated to be ∼1.3 × 10-4 Ω cm2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

    AB - Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 1018cm-3 was estimated to be ∼1.3 × 10-4 Ω cm2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

    UR - http://www.scopus.com/inward/record.url?scp=84925703371&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84925703371&partnerID=8YFLogxK

    U2 - 10.1063/1.4916248

    DO - 10.1063/1.4916248

    M3 - Article

    AN - SCOPUS:84925703371

    VL - 106

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 12

    M1 - 123501

    ER -