Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Masafumi Inaba, Kazuma Suzuki, Megumi Shibuya, Chih Yu Lee, Yoshiho Masuda, Naoya Tomatsu, Wataru Norimatsu, Atsushi Hiraiwa, Michiko Kusunoki, Hiroshi Kawarada

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    9 Citations (Scopus)

    Abstract

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 1018cm-3 was estimated to be ∼1.3 × 10-4 Ω cm2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

    Original languageEnglish
    Article number123501
    JournalApplied Physics Letters
    Volume106
    Issue number12
    DOIs
    Publication statusPublished - 2015 Mar 23

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Inaba, M., Suzuki, K., Shibuya, M., Lee, C. Y., Masuda, Y., Tomatsu, N., Norimatsu, W., Hiraiwa, A., Kusunoki, M., & Kawarada, H. (2015). Very low Schottky barrier height at carbon nanotube and silicon carbide interface. Applied Physics Letters, 106(12), [123501]. https://doi.org/10.1063/1.4916248